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首页 > Products > Power Device > P-channel MOSFETs >The CXCP5367DR is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology
The CXCP5367DR is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology

The CXCP5367DR is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance

The CXCP5367DR is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology
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   产品概述 返回TOPrUL嘉泰姆

The CXCP5367DR is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.

   产品特点 返回TOPrUL嘉泰姆

● RDS(ON)= 0.48Ω @VGS=-4.5V rUL嘉泰姆

● RDS(ON)= 0.67Ω @VGS=-2.5V rUL嘉泰姆

● RDS(ON)= 0.95Ω @VGS=-1.8V rUL嘉泰姆

● RDS(ON)= 2.20Ω @VGS=-1.5V rUL嘉泰姆

● Super high density cell design for extremely low RDS(ON) rUL嘉泰姆

● Exceptional on-resistance and maximum DC current capability rUL嘉泰姆

● Capable doing Cu wire bondingrUL嘉泰姆

   应用范围 返回TOPrUL嘉泰姆

● Power Management in Note book rUL嘉泰姆

● Portable Equipment rUL嘉泰姆

● Battery Powered SystemrUL嘉泰姆

   技术规格书（产品PDF) 返回TOP rUL嘉泰姆

     需要详细的PDF规格书请扫一扫微信联系我们，还可以获得免费样品以及技术支持！rUL嘉泰姆

 QQ截图20160419174301.jpgrUL嘉泰姆

产品封装图 返回TOPrUL嘉泰姆

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电路原理图 返回TOPrUL嘉泰姆

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-0.65VrUL嘉泰姆

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65mΩrUL嘉泰姆

SOT23、SOT23-3L rUL嘉泰姆

CXCP5367BrUL嘉泰姆

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CXCP5367BKR/BSR/BJRrUL嘉泰姆

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SOT-323、SOT-523、SOT-723rUL嘉泰姆

CXCP5367CrUL嘉泰姆

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85mΩrUL嘉泰姆

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CXCP5367DrUL嘉泰姆

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350mΩrUL嘉泰姆

DFN1006-3LrUL嘉泰姆

CXCP5367ErUL嘉泰姆

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95mΩrUL嘉泰姆

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CXCP5367KRrUL嘉泰姆

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39mΩrUL嘉泰姆

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CXCP5368BrUL嘉泰姆

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CXCP5393rUL嘉泰姆

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170mΩrUL嘉泰姆

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CXCP5376rUL嘉泰姆

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DFN2*3-8rUL嘉泰姆

CXCP5378rUL嘉泰姆

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◀ Previous:The CXCP5367D is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology

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Next▶:The CXCP5367E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as -2.5V

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