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首页 > Products > Power Device > P-channel MOSFETs >The CXCP5367D is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology
The CXCP5367D is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology

The CXCP5367D is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance

The CXCP5367D is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology
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   产品概述 返回TOPZ4P嘉泰姆

The CXCP5367D is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.

   产品特点 返回TOPZ4P嘉泰姆

● RDS(ON)= 0.48Ω @VGS=-4.5V Z4P嘉泰姆

● RDS(ON)= 0.67Ω @VGS=-2.5V Z4P嘉泰姆

● RDS(ON)= 0.95Ω @VGS=-1.8V Z4P嘉泰姆

● RDS(ON)= 2.20Ω @VGS=-1.5V Z4P嘉泰姆

● Super high density cell design for extremely low RDS(ON) Z4P嘉泰姆

● Exceptional on-resistance and maximum DC current capability Z4P嘉泰姆

● Capable doing Cu wire bondingZ4P嘉泰姆

   应用范围 返回TOPZ4P嘉泰姆

● Power Management in Note book Z4P嘉泰姆

● Portable Equipment Z4P嘉泰姆

● Battery Powered SystemZ4P嘉泰姆

   技术规格书（产品PDF) 返回TOP Z4P嘉泰姆

     需要详细的PDF规格书请扫一扫微信联系我们，还可以获得免费样品以及技术支持！Z4P嘉泰姆

 QQ截图20160419174301.jpgZ4P嘉泰姆

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SOT23、SOT23-3L Z4P嘉泰姆

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P沟道Z4P嘉泰姆

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-2.8AZ4P嘉泰姆

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350mΩZ4P嘉泰姆

SOT-323、SOT-523、SOT-723Z4P嘉泰姆

CXCP5367CZ4P嘉泰姆

P沟道Z4P嘉泰姆

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P沟道Z4P嘉泰姆

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DFN1006-3LZ4P嘉泰姆

CXCP5367EZ4P嘉泰姆

P沟道Z4P嘉泰姆

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95mΩZ4P嘉泰姆

SOT23Z4P嘉泰姆

CXCP5367KRZ4P嘉泰姆

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65mΩZ4P嘉泰姆

SOT-323Z4P嘉泰姆

CXCP5368Z4P嘉泰姆

P沟道Z4P嘉泰姆

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SOT23Z4P嘉泰姆

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DFN2*2-6Z4P嘉泰姆

CXCP5377Z4P嘉泰姆

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50mΩZ4P嘉泰姆

SOT23-6LZ4P嘉泰姆

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Next▶:The CXCP5367DR is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology

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