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首页 > Products > Power Device > P-channel MOSFETs >The CXCP5367E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as -2.5V
The CXCP5367E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as -2.5V

The CXCP5367E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as -2.5V. This device is suitable for use as a battery protection or in other switching application

The CXCP5367E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as -2.5V
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   产品概述 返回TOPaYO嘉泰姆

The CXCP5367E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as -2.5V. This device is suitable for use as a battery protection or in other switching application.

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   产品特点 返回TOPaYO嘉泰姆

● VDS = -12V,ID =-2.0A aYO嘉泰姆

RDS(ON)<130mΩ @ VGS =-4.5V aYO嘉泰姆

RDS(ON)<175mΩ @ VGS =-2.5V aYO嘉泰姆

 ● High Power and current handing capability aYO嘉泰姆

● Lead free product is acquired aYO嘉泰姆

● Surface Mount PackageaYO嘉泰姆

   应用范围 返回TOPaYO嘉泰姆

● Battery protection aYO嘉泰姆

● Load switch aYO嘉泰姆

● Power managementaYO嘉泰姆

   技术规格书（产品PDF) 返回TOP aYO嘉泰姆

     需要详细的PDF规格书请扫一扫微信联系我们，还可以获得免费样品以及技术支持！aYO嘉泰姆

 QQ截图20160419174301.jpgaYO嘉泰姆

产品封装图 返回TOPaYO嘉泰姆

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电路原理图 返回TOPaYO嘉泰姆

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350mΩaYO嘉泰姆

SOT-323、SOT-523、SOT-723aYO嘉泰姆

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◀ Previous:The CXCP5367DR is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology

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Next▶:The CXCP5367KR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V

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