首页 > Products > Power Device > N and P-channel Bipolar MOSFETs >The CXMS5105 is the N- and P-Channel enhancement MOS Field Effect Transistor as a single package for DC-DC converter or Load switch applications, uses advanced trench technology
The CXMS5105 is the N- and P-Channel enhancement MOS Field Effect Transistor as a single package for DC-DC converter or Load switch applications, uses advanced trench technology
The CXMS5105 is the N- and P-Channel enhancement MOS Field Effect Transistor as a single package for DC-DC converter or Load switch applications, uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. Standard Product CXMS5105 is Pb-free
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产品概述 返回TOP
The CXMS5105 is the N- and P-Channel enhancement MOS Field Effect Transistor as a single package for DC-DC converter or Load switch applications, uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. Standard Product CXMS5105 is Pb-free.
产品特点 返回TOP
z Trench Technology
z Supper high density cell design for extremely low Rds(on)
z Exceptional ON resistance and maximum DC current capability
z Small package design with DFN2x2-6L.
应用范围 返回TOP
z Driver: Relays, Solenoids, Lamps, Hammers
z Power supply converters circuit
z Load/Power Switching for potable device
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产品封装图 返回TOP
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Product |
Polarity | Channel | VDS | VGS | VGS(th) | RDS(ON)@VGS=4.5V | ID@TA=25oC | Package | Size |
| (Max.) | (Max.) | (Max.) | (Typ.) | (MAX.) | (L×W) | ||||
| (V) | (V) | (V) | (Ω) | (A) | (mm) | ||||
| CXMS5105 | N + P | 2 | 20/-20 | ±6/±8 | 0.85/-1.0 | 0.18/0.085 | 0.65/-3.1 | DFN2020-6L | 2.0 x 2.0 |
| CXMS5106 | N + P | 2 | 20/-20 | ±6 | 0.9/-0.9 | 0.23/0.52 | 0.8/-0.59 | SOT-363 | 2.1 x 2.3 |
| CXMS5107 | N + P | 2 | 20/-20 | ±6 | 0.9/-0.9 | 0.18/0.45 | 0.79/-0.5 | SOT-563 | 1.6 x 1.6 |
| CXMS5108 | N + P | 2 | 20/-20 | ±8 | 1/-1 | 0.033/0.085 | 4.4/-2.8 | SOT-23-6L | 2.9 x 2.8 |
| CXMS5109 | N + P | 2 | 12/-12 | ±8 | 1.2/-1.2 | 0.028/-0.057 | 5.1/-4.0 | DFN2020-6L | 2.0 x 2.0 |
