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首页 > Products > Power Device > N and P-channel Bipolar MOSFETs >The CXPP5452CS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
The CXPP5452CS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

The CXPP5452CS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
N channel
 VDS =60V, ID =6.3A
RDS(ON)<30mΩ @ VGS=10V
P channel
 VDS =-60V, ID =-5A
RDS(ON)<80mΩ @ VGS=-10V
 High power and current handing capability
 Lead free product is acquired
 Surface mount package

The CXPP5452CS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
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The CXPP5452CS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

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N channel h3h嘉泰姆

 VDS =60V, ID =6.3A h3h嘉泰姆

RDS(ON)<30mΩ @ VGS=10V h3h嘉泰姆

P channel h3h嘉泰姆

 VDS =-60V, ID =-5A h3h嘉泰姆

RDS(ON)<80mΩ @ VGS=-10V h3h嘉泰姆

 High power and current handing capability h3h嘉泰姆

 Lead free product is acquired h3h嘉泰姆

 Surface mount packageh3h嘉泰姆

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 H-bridge h3h嘉泰姆

 Invertersh3h嘉泰姆

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MOSFET
Part N-Channel P-Channel Operating Package
number VDS   (V) RDS(ON) (mΩ) VGS=10V VGS(th)(V) VDS (V) RDS(ON) (mΩ) VGS=-10V VGS(th)(V) Temperature(℃)
CXPP5449CS 30 36 1.5 -30 69 -1.6 -145 SOT23-6L
CXPP5450CS 30 20 1.6 -30 28 -1.9 -145 SOP-8
CXPP5451CS 40 15.4 1.7 -40 26 -1.5 -145 SOP-8
CXPP5452CS 60 37 2 -60 64 -26 -145 SOP-8