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首页 > Products > Power Device > N and P-channel Bipolar MOSFETs >CXMS5209 is the dual P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored
CXMS5209 is the dual P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored

CXMS5209 is the dual P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as LCD backlight, notebook computer power management, LCD-TV , LCD- Monitor and other battery powered circuits
-30V/-5.0A, RDS(ON) = 65mΩ @VGS =-10V
-30V/-4.4A, RDS(ON) = 85mΩ @VGS = -6.0V
-30V/-3.8A, RDS(ON) = 95mΩ @VGS = -4.5V
Super high density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current capability

CXMS5209  is the dual P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored
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                          目录Sgw嘉泰姆

   1.产品概述      2.产品特点      3.应用范围     4.技术规格书下载(PDF文档)Sgw嘉泰姆

   5.产品封装      6.电路原理图     7.相关产品Sgw嘉泰姆

一.产品概述Sgw嘉泰姆


  CXMS5209 is the dual P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as LCD backlight, notebook computer power management, LCD-TV , LCD- Monitor and other battery powered circuitsSgw嘉泰姆

二.产品特点Sgw嘉泰姆


 z -30V/-5.0A, RDS(ON) = 65mΩ @VGS =-10VSgw嘉泰姆

 z -30V/-4.4A, RDS(ON) = 85mΩ @VGS = -6.0VSgw嘉泰姆

 z -30V/-3.8A, RDS(ON) = 95mΩ @VGS = -4.5VSgw嘉泰姆

 z Super high density cell design for extremely low RDS(ON)Sgw嘉泰姆

 z Exceptional on-resistance and maximum DC current capabilitySgw嘉泰姆

 z SOP-8 package designSgw嘉泰姆

三.应用范围Sgw嘉泰姆


    Sgw嘉泰姆

四.技术规格书(产品PDF)Sgw嘉泰姆


需要详细的PDF规格书请扫一扫微信联系我们,还可以获得免费样品以及技术支持!Sgw嘉泰姆

 QQ截图20160419174301.jpgSgw嘉泰姆

五.产品封装图Sgw嘉泰姆


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六.电路原理图Sgw嘉泰姆


 blob.png  Sgw嘉泰姆

七.相关芯片选择指南     更多的同类产品......Sgw嘉泰姆


MOSFET
型号 说明
CXMS5207 30V/4A PMOS
CXMS5208A 5A PMOS
CXMS5209 5A/30V 双PMOS
CXMS5204 3.5A/ 20V PMOS
CXMS5205 4A/ 30V PMOS
CXMS5201 2A P MOS