首页 > Products > Power Device > N-channel MOSFETs >CX10HN60 high voltage superjunction MOSFET products high voltage superjunction MOSFET products ultra-low power consumption ultra-low gate charge ultra-low output capacitance for computer motherboard power server
CX10HN60 high voltage superjunction MOSFET products high voltage superjunction MOSFET products ultra-low power consumption ultra-low gate charge ultra-low output capacitance for computer motherboard power server
CX10HN60 high voltage superjunction MOSFET products high voltage superjunction MOSFET products ultra-low power consumption ultra-low gate charge ultra-low output capacitance for computer motherboard power server / communication domain adapter LCD and plasma flat TV lighting UPS and industrial power application domain
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[ CX10HN60 ]"
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产品概述 返回TOP
NeoFET基于先进的深槽填充工艺，是新一代高压超结MOSFET产品。与传统MOSFET相比较，本产品的特征导通电阻下降了70%。通过利用先进的制造技术以及精确的工艺控制，NeoFET产品具有优越的开关特性和可靠性。本产品适用于计算机主板电源，服务器/通信领域，适配器，液晶和等离子平板电视，照明，UPS以及工业电源应用领域
产品特点 返回TOP
● RDS(on)=0.85Ω(典型值)@VGS=10V，ID=2.8A
● 超高dv/dt耐量
● 高速开关可靠性
● 超低功耗，超低Rdson*Qg
● 超低栅电荷量(Typ.Qg=15nC)
● 超低输出电容
● 100%雪崩耐量测试
● 符合JEDEC无铅标准
应用范围 返回TOP
● 计算机主板电源
● 适配器
● 液晶和等离子平板电视
● 照明
● 通信，服务器
● UPS
● 开关电源应用
技术规格书（产品PDF) 返回TOP
需要详细的PDF规格书请扫一扫微信联系我们，还可以获得免费样品以及技术支持！
产品封装图 返回TOP
电路原理图 返回TOP
相关芯片选择指南 返回TOP
| N沟道超结MOS | ||||||||
| Product | Character | Darin to Source Voltage | Continuous Drain Current | Drain Current Pulsed | Gate to Source Voltage | RDS(ON) Typ.(Ω) | Single Pulsed Avalanche Energy | Package |
| CX4HN60 | N-Channel Superjunction MOSFET | 0~600V | 0~4.5A | 0~13A | ±30V | 0.85 | 130mJ | TO251/252 |
| CX10HN60 | N-Channel Superjunction MOSFET | 0~600V | 0~10A | 0~30A | ±30V | 0.34 | 200mJ | TO220/220FP |
