首页 > Products > Power Device > N-channel MOSFETs >CX4HN60Based on advanced deep groove filling technology, neofet is a new generation of high voltage super junction MOSFET products. Compared with traditional MOSFET
CX4HN60Based on advanced deep groove filling technology, neofet is a new generation of high voltage super junction MOSFET products. Compared with traditional MOSFET
CX4HN60 By using advanced manufacturing technology and precise process control, neofet products have superior switching characteristics and reliability. This product is suitable for computer mainboard power supply, server / communication field, adapter, LCD and plasma flat TV, lighting, ups and industrial power application field
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[ CX4HN60 ]"
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产品概述 返回TOP
NeoFET基于先进的深槽填充工艺，是新一代高压超结MOSFET产品。与传统MOSFET相比较，本产品的特征导通电阻下降了70%。通过利用先进的制造技术以及精确的工艺控制，NeoFET产品具有优越的开关特性和可靠性。本产品适用于计算机主板电源，服务器/通信领域，适配器，液晶和等离子平板电视，照明，UPS以及工业电源应用领域
产品特点 返回TOP
● RDS(on)=0.85Ω(典型值)@VGS=10V，ID=2.8A
● 超高dv/dt耐量
● 高速开关可靠性
● 超低功耗，超低Rdson*Qg
● 超低栅电荷量(Typ.Qg=15nC)
● 超低输出电容
● 100%雪崩耐量测试
● 符合JEDEC无铅标准
应用范围 返回TOP
● 计算机主板电源
● 适配器
● 液晶和等离子平板电视
● 照明
● 通信，服务器
● UPS
● 开关电源应用
技术规格书（产品PDF) 返回TOP
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产品封装图 返回TOP
电路原理图 返回TOP
相关芯片选择指南 返回TOP
| N沟道超结MOS | ||||||||
| Product | Character | Darin to Source Voltage | Continuous Drain Current | Drain Current Pulsed | Gate to Source Voltage | RDS(ON) Typ.(Ω) | Single Pulsed Avalanche Energy | Package |
| CX4HN60 | N-Channel Superjunction MOSFET | 0~600V | 0~4.5A | 0~13A | ±30V | 0.85 | 130mJ | TO251/252 |
| CX10HN60 | N-Channel Superjunction MOSFET | 0~600V | 0~10A | 0~30A | ±30V | 0.34 | 200mJ | TO220/220FP |
