• [ CX15N10 ]"

Ordering

目录

• 1.产品概述       2.产品特点     V5e嘉泰姆

• 3.应用范围       4.技术规格书下载（PDF文档）V5e嘉泰姆

• 5.产品封装       6.电路原理图  V5e嘉泰姆

• 7.相关产品V5e嘉泰姆

   产品概述 返回TOPV5e嘉泰姆

The CX15N10 is N channel enhancement mode power effect transitor which is produced using high cell density advanced trench technology.The high density process is especially able to minize on-state resistance.These devices are.especially suited for low voltage application power management DC-DC converters.

   产品特点 返回TOPV5e嘉泰姆

100V/15 A, RDS(ON)=80.0mΩ (typ.)@VGS= 10VV5e嘉泰姆

100V/8A,RDS(ON)=115m Ω(typ.)@VGS= 4.5V V5e嘉泰姆

Super high design for extremely low RDS(ON) V5e嘉泰姆

Exceptional on-resistance and Maximum DC current capability V5e嘉泰姆

Full RoHS complianceV5e嘉泰姆

SOP8 andTO252 package designV5e嘉泰姆

100% UIS Tested V5e嘉泰姆

 100% Rg testedV5e嘉泰姆

   应用范围 返回TOPV5e嘉泰姆

Power Management V5e嘉泰姆

DC/DC Converter V5e嘉泰姆

Load Switch
V5e嘉泰姆

   技术规格书（产品PDF) 返回TOP V5e嘉泰姆

     需要详细的PDF规格书请扫一扫微信联系我们，还可以获得免费样品以及技术支持！V5e嘉泰姆

 V5e嘉泰姆

产品封装图 返回TOPV5e嘉泰姆

V5e嘉泰姆

电路原理图 返回TOPV5e嘉泰姆

V5e嘉泰姆

相关芯片选择指南 返回TOP        更多的同类产品......

◀ Previous:N-Channel Enhancement Mode MOSFET CXMS5206 Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems

Back to top

Next▶:Cxms5213xg series n-channel enhanced power field effect transistor (MOSFET) adopts DMOS channel technology with high cell density. This high density process is particularly suitable for reducing on resistance.