• [ CX15N10 ]"

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目录

• 1.产品概述       2.产品特点     Wl7嘉泰姆

• 3.应用范围       4.技术规格书下载（PDF文档）Wl7嘉泰姆

• 5.产品封装       6.电路原理图  Wl7嘉泰姆

• 7.相关产品Wl7嘉泰姆

   产品概述 返回TOPWl7嘉泰姆

The CX15N10 is N channel enhancement mode power effect transitor which is produced using high cell density advanced trench technology.The high density process is especially able to minize on-state resistance.These devices are.especially suited for low voltage application power management DC-DC converters.

   产品特点 返回TOPWl7嘉泰姆

100V/15 A, RDS(ON)=80.0mΩ (typ.)@VGS= 10VWl7嘉泰姆

100V/8A,RDS(ON)=115m Ω(typ.)@VGS= 4.5V Wl7嘉泰姆

Super high design for extremely low RDS(ON) Wl7嘉泰姆

Exceptional on-resistance and Maximum DC current capability Wl7嘉泰姆

Full RoHS complianceWl7嘉泰姆

SOP8 andTO252 package designWl7嘉泰姆

100% UIS Tested Wl7嘉泰姆

 100% Rg testedWl7嘉泰姆

   应用范围 返回TOPWl7嘉泰姆

Power Management Wl7嘉泰姆

DC/DC Converter Wl7嘉泰姆

Load Switch
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   技术规格书（产品PDF) 返回TOP Wl7嘉泰姆

     需要详细的PDF规格书请扫一扫微信联系我们，还可以获得免费样品以及技术支持！Wl7嘉泰姆

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产品封装图 返回TOPWl7嘉泰姆

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电路原理图 返回TOPWl7嘉泰姆

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Next▶:Cxms5213xg series n-channel enhanced power field effect transistor (MOSFET) adopts DMOS channel technology with high cell density. This high density process is particularly suitable for reducing on resistance.