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首页 > Products > Power Device > P-channel MOSFETs >CXCP5367BKR CXCP5367BSR CXCP5367BJR is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to mini
CXCP5367BKR CXCP5367BSR CXCP5367BJR is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to mini

CXCP5367BKR CXCP5367BSR CXCP5367BJR is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance

CXCP5367BKR CXCP5367BSR CXCP5367BJR is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to mini
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   产品概述 返回TOPn0U嘉泰姆

The CXCP5367BKR/BSR/BJR is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance

   产品特点 返回TOPn0U嘉泰姆

● RDS(ON)= 0.48Ω @VGS=-4.5V n0U嘉泰姆

● RDS(ON)= 0.67Ω @VGS=-2.5V n0U嘉泰姆

● RDS(ON)= 0.95Ω @VGS=-1.8V n0U嘉泰姆

● RDS(ON)= 2.20Ω @VGS=-1.5V n0U嘉泰姆

● Super high density cell design for extremely low RDS(ON) n0U嘉泰姆

● Exceptional on-resistance and maximum DC current capability n0U嘉泰姆

● Capable doing Cu wire bondingn0U嘉泰姆

   应用范围 返回TOPn0U嘉泰姆

● Power Management in Note book n0U嘉泰姆

● Portable Equipment n0U嘉泰姆

● Battery Powered Systemn0U嘉泰姆

   技术规格书（产品PDF) 返回TOP n0U嘉泰姆

     需要详细的PDF规格书请扫一扫微信联系我们，还可以获得免费样品以及技术支持！n0U嘉泰姆

 QQ截图20160419174301.jpgn0U嘉泰姆

产品封装图 返回TOPn0U嘉泰姆

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电路原理图 返回TOPn0U嘉泰姆

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8mΩn0U嘉泰姆

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CX08P12Dn0U嘉泰姆

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-8Vn0U嘉泰姆

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28mΩn0U嘉泰姆

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CX16P12Dn0U嘉泰姆

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-6Vn0U嘉泰姆

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350mΩn0U嘉泰姆

SOT-323、SOT-523、SOT-723n0U嘉泰姆

CXCP5367Cn0U嘉泰姆

P沟道n0U嘉泰姆

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SOT23n0U嘉泰姆

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-0.7Vn0U嘉泰姆

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95mΩn0U嘉泰姆

SOT23n0U嘉泰姆

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12mΩn0U嘉泰姆

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双P沟道n0U嘉泰姆

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-18An0U嘉泰姆

85mΩn0U嘉泰姆

SOP8n0U嘉泰姆

CXCP5392n0U嘉泰姆

P沟道n0U嘉泰姆

-22Vn0U嘉泰姆

-8Vn0U嘉泰姆

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110mΩn0U嘉泰姆

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-1Vn0U嘉泰姆

-5.0An0U嘉泰姆

-30An0U嘉泰姆

50mΩn0U嘉泰姆

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Next▶:The CXCP5367C uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as -2.5V

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