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首页 > Products > Power Device > P-channel MOSFETs >CXCP5367B Adopt advanced channel technology to provide excellent RDS (on) low grid charging and operation at grid voltage as low as - 2.5V
CXCP5367B Adopt advanced channel technology to provide excellent RDS (on) low grid charging and operation at grid voltage as low as - 2.5V

The CXCP5367B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as -2.5V. This device is suitable for use as a battery protection or in other switching application

CXCP5367B Adopt advanced channel technology to provide excellent RDS (on) low grid charging and operation at grid voltage as low as - 2.5V
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   产品概述 返回TOPAtq嘉泰姆

The CXCP5367B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as -2.5V. This device is suitable for use as a battery protection or in other switching application.

   产品特点 返回TOPAtq嘉泰姆

● VDS = -20V,ID =-2.8A Atq嘉泰姆

RDS(ON)<115mΩ @ VGS =-4.5V Atq嘉泰姆

RDS(ON)<160mΩ @ VGS =-2.5V Atq嘉泰姆

● High Power and current handing capability Atq嘉泰姆

● Lead free product is acquired Atq嘉泰姆

● Surface Mount PackageAtq嘉泰姆

   应用范围 返回TOPAtq嘉泰姆

● Battery protection Atq嘉泰姆

● Load switch Atq嘉泰姆

● Power managementAtq嘉泰姆

   技术规格书（产品PDF) 返回TOP Atq嘉泰姆

     需要详细的PDF规格书请扫一扫微信联系我们，还可以获得免费样品以及技术支持！Atq嘉泰姆

 QQ截图20160419174301.jpgAtq嘉泰姆

产品封装图 返回TOPAtq嘉泰姆

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电路原理图 返回TOPAtq嘉泰姆

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VGSAtq嘉泰姆

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RDS(on)Atq嘉泰姆

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BSS84Atq嘉泰姆

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CX08P12DAtq嘉泰姆

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65mΩAtq嘉泰姆

SOT23、SOT23-3L Atq嘉泰姆

CXCP5367BAtq嘉泰姆

P沟道Atq嘉泰姆

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-12VAtq嘉泰姆

-0.7VAtq嘉泰姆

-2.8AAtq嘉泰姆

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83mΩAtq嘉泰姆

SOT23Atq嘉泰姆

CXCP5367BKR/BSR/BJRAtq嘉泰姆

P沟道Atq嘉泰姆

-20VAtq嘉泰姆

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-0.45VAtq嘉泰姆

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-1.6AAtq嘉泰姆

350mΩAtq嘉泰姆

SOT-323、SOT-523、SOT-723Atq嘉泰姆

CXCP5367CAtq嘉泰姆

P沟道Atq嘉泰姆

-12VAtq嘉泰姆

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-2.8AAtq嘉泰姆

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85mΩAtq嘉泰姆

SOT23Atq嘉泰姆

CXCP5367DAtq嘉泰姆

P沟道Atq嘉泰姆

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350mΩAtq嘉泰姆

SOT23Atq嘉泰姆

CXCP5367DRAtq嘉泰姆

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350mΩAtq嘉泰姆

DFN1006-3LAtq嘉泰姆

CXCP5367EAtq嘉泰姆

P沟道Atq嘉泰姆

-12VAtq嘉泰姆

-12VAtq嘉泰姆

-0.7VAtq嘉泰姆

-2AAtq嘉泰姆

-7AAtq嘉泰姆

95mΩAtq嘉泰姆

SOT23Atq嘉泰姆

CXCP5367KRAtq嘉泰姆

P沟道Atq嘉泰姆

-20VAtq嘉泰姆

-10VAtq嘉泰姆

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65mΩAtq嘉泰姆

SOT-323Atq嘉泰姆

CXCP5368Atq嘉泰姆

P沟道Atq嘉泰姆

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39mΩAtq嘉泰姆

SOT23Atq嘉泰姆

CXCP5368BAtq嘉泰姆

P沟道Atq嘉泰姆

-12VAtq嘉泰姆

-12VAtq嘉泰姆

-0.7VAtq嘉泰姆

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-15AAtq嘉泰姆

40mΩAtq嘉泰姆

SOT23Atq嘉泰姆

CXCP5393Atq嘉泰姆

P沟道Atq嘉泰姆

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DFN2*2-6Atq嘉泰姆

CXCP5377Atq嘉泰姆

P沟道Atq嘉泰姆

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-1.8AAtq嘉泰姆

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170mΩAtq嘉泰姆

SOT-23-3LAtq嘉泰姆

CXCP5376Atq嘉泰姆

P沟道Atq嘉泰姆

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-1.5VAtq嘉泰姆

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73mΩAtq嘉泰姆

SOT23-3L、SOT23Atq嘉泰姆

CXCP5369Atq嘉泰姆

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SOT23-3LAtq嘉泰姆

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SOT23-3LAtq嘉泰姆

CXCP5371PRAtq嘉泰姆

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50mΩAtq嘉泰姆

SOT-89-3LAtq嘉泰姆

CXCP5372/BAtq嘉泰姆

P沟道Atq嘉泰姆

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55mΩAtq嘉泰姆

SOT23-3L、SOT23Atq嘉泰姆

CXCP5373/BAtq嘉泰姆

P沟道Atq嘉泰姆

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-0.7VAtq嘉泰姆

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118mΩAtq嘉泰姆

SOT23-3L、SOT23Atq嘉泰姆

CXCP5374EAtq嘉泰姆

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SOT23-3LAtq嘉泰姆

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50mΩAtq嘉泰姆

SOT23-3L、SOT23Atq嘉泰姆

CXCP5384Atq嘉泰姆

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39mΩAtq嘉泰姆

SOP8Atq嘉泰姆

CXCP5383Atq嘉泰姆

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SOP8Atq嘉泰姆

CXCP5383BAtq嘉泰姆

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17mΩAtq嘉泰姆

SOP8Atq嘉泰姆

CXCP5380Atq嘉泰姆

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11.5mΩAtq嘉泰姆

SOP8Atq嘉泰姆

CXCP5389Atq嘉泰姆

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64mΩAtq嘉泰姆

SOP8Atq嘉泰姆

CXCP5387Atq嘉泰姆

P沟道Atq嘉泰姆

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73mΩAtq嘉泰姆

SOP8Atq嘉泰姆

CXCP5386Atq嘉泰姆

P沟道Atq嘉泰姆

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6mΩAtq嘉泰姆

SOP8Atq嘉泰姆

CXCP5382Atq嘉泰姆

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30mΩAtq嘉泰姆

SOP8Atq嘉泰姆

CXCP5388Atq嘉泰姆

P沟道Atq嘉泰姆

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12mΩAtq嘉泰姆

SOP8Atq嘉泰姆

CXCP5388AAtq嘉泰姆

P沟道Atq嘉泰姆

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7.5mΩAtq嘉泰姆

SOP8Atq嘉泰姆

CXCP5388BAtq嘉泰姆

P沟道Atq嘉泰姆

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30mΩAtq嘉泰姆

SOP8Atq嘉泰姆

CXCP5391Atq嘉泰姆

双P沟道Atq嘉泰姆

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85mΩAtq嘉泰姆

SOP8Atq嘉泰姆

CXCP5392Atq嘉泰姆

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110mΩAtq嘉泰姆

DFN2*3-8Atq嘉泰姆

CXCP5378Atq嘉泰姆

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50mΩAtq嘉泰姆

SOT23-6LAtq嘉泰姆

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◀ Previous:CXCP5367 CXCP5367A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch

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Next▶:CXCP5367BKR CXCP5367BSR CXCP5367BJR is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to mini

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