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首页 > Products > Power Management > DC/DC Step-Down Converter > Buck Step-Down Converter >CXSD62121A CXSD62121B CXSD62121 integrates a synchronous buck PWM con-troller to generate VDDQ, a sourcing and sinking LDO linear regulator to generate VTT.
CXSD62121A CXSD62121B CXSD62121 integrates a synchronous buck PWM con-troller to generate VDDQ, a sourcing and sinking LDO linear regulator to generate VTT.

The CXSD62121A CXSD62121B CXSD62121 integrates a synchronous buck PWM con-troller to generate VDDQ, a sourcing and sinking LDO linear regulator to generate VTT. It offers the lowest total solution cost in system where space is at a premium. The CXSD62121A CXSD62121B CXSD62121 provides excellent transient response and accurate DC voltage output in either PFM or PWM Mode.In Pulse Frequency Mode (PFM), the CXSD62121A CXSD62121B CXSD62121 provides very high efficiency over light to heavy loads with loading-modulated switching frequencies. On TQFN-20 Package,the Forced PWM Mode works nearly at constant frequency for low-noise requirements. The CXSD62121A CXSD62121B CXSD62121 is equipped with accurate current-limit,output under-voltage, and output over-voltage protections.A Power-On- Reset function monitors the voltage on VCC prevents wrong operation during power on. Droop func-tion is allowed to adjust output voltage during light load period.The LDO is designed to provide a regulated voltage with bi-directional output current for DDR-SDRAM termination.The device integrates two power transistors to source or sink current up to 1.5A. It also incorporates current-limit and thermal shutdown protection.The output voltage of LDO tracks the voltage at VREF pin.An internal resistor divider is used to provide a half volt-age of VREF for VTTREF and VTT Voltage. The VTT output voltage is only requiring 20μF of ceramic output capaci tance for stability and fast transient response. The S3 and S5 pins provide the sleep state for VTT (S3 state)and suspend state (S4/S5 state) for device, when S5 and S3 are both pulled low the device provides the soft-off for VTT and VTTREF

CXSD62121A CXSD62121B CXSD62121 integrates a synchronous buck PWM con-troller to generate VDDQ, a sourcing and sinking LDO linear regulator to generate VTT.
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目录M1F嘉泰姆

1.产品概述                       2.产品特点M1F嘉泰姆
3.应用范围                       4.下载产品资料PDF文档 M1F嘉泰姆
5.产品封装图                     6.电路原理图                   M1F嘉泰姆
7.功能概述                        8.相关产品M1F嘉泰姆

一,产品概述(General Description)  M1F嘉泰姆

    The CXSD62121A CXSD62121B CXSD62121 integrates a synchronous buck PWM con-troller to generate VDDQ, a sourcing and sinking LDO linear regulator to generate VTT. It offers the lowest total solution cost in system where space is at a premium.  The CXSD62121A CXSD62121B CXSD62121 provides excellent transient response and accurate DC voltage output in either PFM or PWM Mode.In Pulse Frequency Mode (PFM), the CXSD62121A CXSD62121B CXSD62121 provides very high efficiency over light to heavy loads with loading-modulated switching frequencies. On TQFN-20 Package,the Forced PWM Mode works nearly at constant frequency for low-noise requirements.  The CXSD62121A CXSD62121B CXSD62121 is equipped with accurate current-limit,output under-voltage, and output over-voltage protections.A Power-On- Reset function monitors the voltage on VCC prevents wrong operation during power on. Droop func-tion is allowed to adjust output voltage during light load period.The LDO is designed to provide a regulated voltage with bi-directional output current for DDR-SDRAM termination.The device integrates two power transistors to source or sink current up to 1.5A. It also incorporates current-limit and thermal shutdown protection.The output voltage of LDO tracks the voltage at VREF pin.An internal resistor divider is used to provide a half volt-age of VREF for VTTREF and VTT Voltage. The VTT output voltage is only requiring 20μF of ceramic output capaci tance for stability and fast transient response. The S3 and S5 pins provide the sleep state for VTT (S3 state)and suspend state (S4/S5 state) for device, when S5 and S3 are both pulled low the device provides the soft-off for VTT and VTTREF                                                         M1F嘉泰姆

产品特点(Features)M1F嘉泰姆

High Input Voltages Range from 3V to 28V Input PowerM1F嘉泰姆
Provide Adjustable Output Voltage from 0.75V toM1F嘉泰姆
5.5V +1% Accuracy over TemperatureM1F嘉泰姆
Integrated MOSFET Drivers and Bootstrap Forward P-CH MOSFETM1F嘉泰姆
Low Quiescent Current (200μA)M1F嘉泰姆
Excellent Line and Load Transient ResponsesM1F嘉泰姆
PFM Mode for Increased Light Load EfficiencyM1F嘉泰姆
Constant On-Time Controller SchemeM1F嘉泰姆
- Switching Frequency Compensation for PWM ModeM1F嘉泰姆
- Adjustable Switching Frequency from 100kHz toM1F嘉泰姆
550kHz in PWM Mode with DC Output CurrentM1F嘉泰姆
S3 and S5 Pins Control The Device in S0, S3 or S4/S5 StateM1F嘉泰姆
Power Good MonitoringM1F嘉泰姆
Extra Droop Voltage Control Function withM1F嘉泰姆
Adjustable Current SettingM1F嘉泰姆
70% Under-Voltage Protection (UVP)M1F嘉泰姆
125% Over-Voltage Protection (OVP)M1F嘉泰姆
Adjustable Current-Limit ProtectionM1F嘉泰姆
- Using Sense Low-Side MOSFET’s RDS(ON)M1F嘉泰姆
TQFN-20 3mmx3mm Thin packageM1F嘉泰姆
Lead Free Available (RoHS Compliant)M1F嘉泰姆
+1.5A LDO Section (VTT)M1F嘉泰姆
Sourcing or Sinking Current up to 1.5AM1F嘉泰姆
Fast Transient Response for Output VoltageM1F嘉泰姆
Output Ceramic Capacitors Support at least 10μMLCCM1F嘉泰姆
VTT and VTTREF Track at Half the VDDQSNS by internal dividerM1F嘉泰姆
+20mV Accuracy for VTT and VTTREFM1F嘉泰姆
Independent Over-Current Limit (OCL)M1F嘉泰姆
Thermal Shutdown ProtectionM1F嘉泰姆
三,应用范围 (Applications)M1F嘉泰姆


DDR2, and DDR3 Memory Power SuppliesM1F嘉泰姆
SSTL-2 SSTL-18 and HSTL TerminationM1F嘉泰姆
四.下载产品资料PDF文档 M1F嘉泰姆


需要详细的PDF规格书请扫一扫微信联系我们,还可以获得免费样品以及技术支持M1F嘉泰姆

 QQ截图20160419174301.jpgM1F嘉泰姆

五,产品封装图 (Package)M1F嘉泰姆


blob.pngM1F嘉泰姆
六.电路原理图M1F嘉泰姆


blob.pngM1F嘉泰姆

七,功能概述M1F嘉泰姆


Soft- Start (cont.)M1F嘉泰姆

During soft-start stage before the PGOOD pin is ready,M1F嘉泰姆
the under voltage protection is prohibited. The over volt-M1F嘉泰姆
age and current limit protection functions are enabled. IfM1F嘉泰姆
the output capacitor has residue voltage before startup,M1F嘉泰姆
both low-side and high-side MOSFETs are in off-stateM1F嘉泰姆
until the internal digital soft start voltage equal the inter-M1F嘉泰姆
nal feedback voltage. This will ensure the output voltageM1F嘉泰姆
starts from its existing voltage level.M1F嘉泰姆
The VTT LDO part monitors the output current, both sourc-M1F嘉泰姆
ing and sinking current, and limits the maximum outputM1F嘉泰姆
current to prevent damages during current overload orM1F嘉泰姆
short circuit (shorted from VTT to GND or VLDOIN)M1F嘉泰姆
conditions.M1F嘉泰姆
The VTT LDO provides a soft-start function, using theM1F嘉泰姆
constant current to charge the output capacitor that givesM1F嘉泰姆
a rapid and linear output voltage rise. If the load current isM1F嘉泰姆
above the current limit start-up, the VTT cannot startM1F嘉泰姆
successfully.CXSD62121A CXSD62121B CXSD62121 has an independent counter for each output,M1F嘉泰姆
but the PGOOD signal indicates only the status of VDDQM1F嘉泰姆
and does not indicate VTT power good externally.M1F嘉泰姆
Power-Good Output (PGOOD)M1F嘉泰姆
PGOOD is an open-drain output and the PGOOD com-M1F嘉泰姆
parator continuously monitors the output voltage. PGOODM1F嘉泰姆
is actively held low in shutdown, and standby. When PWMM1F嘉泰姆
converter’s output voltage is greater than 95% of its tar-M1F嘉泰姆
get value, the internal open-drain device will be pulledM1F嘉泰姆
low. After 63μs debounce time, the PGOOD goes high.M1F嘉泰姆
The PGOOD goes low if VVDDQ output is 10% below orM1F嘉泰姆
above its nominal regulation point.M1F嘉泰姆
Under Voltage ProtectionM1F嘉泰姆
In the process of operation, if a short-circuit occurs, theM1F嘉泰姆
output voltage will drop quickly. When load current is big-M1F嘉泰姆
ger than current limit threshold value, the output voltageM1F嘉泰姆
will fall out of the required regulation range. The under-M1F嘉泰姆
voltage continually monitors the setting output voltageM1F嘉泰姆
after 2ms of PWM operations to ensure startup. If a loadM1F嘉泰姆
step is strong enough to pull the output voltage lowerM1F嘉泰姆
than the under voltage threshold (70% of normal outputM1F嘉泰姆
voltage), CXSD62121A CXSD62121B CXSD62121 shuts down the output gradually andM1F嘉泰姆
latches off both high and low side MOSFETs.M1F嘉泰姆
Over Voltage Protection (OVP)M1F嘉泰姆
The feedback voltage should increase over 125% of theM1F嘉泰姆
reference voltage due to the high-side MOSFET failure orM1F嘉泰姆
for other reasons, and the over voltage protection com-M1F嘉泰姆
parator designed with a 1.5μs noise filter will force theM1F嘉泰姆
low-side MOSFET gate driver to be high. This action ac-M1F嘉泰姆
tively pulls down the output voltage and eventually at-M1F嘉泰姆
tempts to blow the battery fuse.M1F嘉泰姆
When the OVP occurs, the PGOOD pin will pull down andM1F嘉泰姆
latch-off the converter. This OVP scheme only clamps theM1F嘉泰姆
voltage overshoot, and does not invert the output voltageM1F嘉泰姆
when otherwise activated with a continuously high outputM1F嘉泰姆
from low-side MOSFET driver. It’s a common problem forM1F嘉泰姆
OVP schemes with a latch. Once an over-voltage faultM1F嘉泰姆
condition is set, toggling VCC power-on-reset signal canM1F嘉泰姆
only reset it.M1F嘉泰姆
PWM Converter Current LimitM1F嘉泰姆
The current-limit circuit employs a unique “valley” currentM1F嘉泰姆
sensing algorithm (Figure 2). CS pin should be con-M1F嘉泰姆
nected to VCC through the trip voltage-setting resistor,M1F嘉泰姆
RCS. CS terminal sinks 5mA current, ICS, and the currentM1F嘉泰姆
limit threshold is set to the voltage across the RCS. TheM1F嘉泰姆
voltage between or CS_GND pin and PHASE pin moni-M1F嘉泰姆
tors the inductor current so that PHASE pin should beM1F嘉泰姆
connected to the drain terminal of the low side MOSFET.M1F嘉泰姆
PGND is used as the positive current sensing node soM1F嘉泰姆
that PGND should be connected to the proper currentM1F嘉泰姆
sensing device, i.e. the sense resistor or the source ter-M1F嘉泰姆
minal of the low side MOSFET.M1F嘉泰姆
If the magnitude of the current-sense signal is above theM1F嘉泰姆
current-limit threshold, the PWM is not allowed to initiateM1F嘉泰姆
a new cycle. The actual peak current is greater than theM1F嘉泰姆
current-limit threshold by an amount equal to the induc-M1F嘉泰姆
tor ripple current. Therefore, the exact current- limit char-M1F嘉泰姆
acteristic and maximum load capability are a function ofM1F嘉泰姆
the sense resistance, inductor value, and input voltage.M1F嘉泰姆
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