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首页 > Products > Power Management > DC/DC Step-Down Converter > Buck Step-Down Converter >The CXSD62106/A integrates a synchronous buck PWM controller to generate VDDQ, a sourcing and sinking LDO linear regulator to generate VTT. It provides a complete power supply for DDR2 and DDR3 memory
The CXSD62106/A integrates a synchronous buck PWM controller to generate VDDQ, a sourcing and sinking LDO linear regulator to generate VTT. It provides a complete power supply for DDR2 and DDR3 memory

The CXSD62106/A integrates a synchronous buck PWM controller to generate
VDDQ, a sourcing and sinking LDO linear regulator to generate VTT. It provides
a complete power supply for DDR2 and DDR3 memory system. It offers the lowest
total solution cost in system where space is at a premium.
The CXSD62106/A provides excellent transient response and accurate DC
voltage output in either PFM or PWM Mode. In Pulse Frequency Mode (PFM), the CXSD62106/A provides very high efficiency over light to heavy loads with loading-modulated switching frequencies. On TQFN4x4- 24A package, the Forced PWM
Mode works nearly at con-stant frequency for low-noise requirements.
The CXSD62106/A is equipped with accurate current-limit,output under-voltage,
and output over-voltage protections.A Power-On-Reset function monitors the
voltage on VCC prevents wrong operation during power on.The LDO is designed
to provide a regulated voltage with bi-directional output current for DDR-SDRAM termination.The device integrates two power transistors to source or sink current
up to 1.5A. It also incorporates current-limit and thermal shutdown protection.
The output voltage of LDO tracks the voltage at VTTREF pin. An internal resistor
divider is used to provide a half voltage of VDDQ for VTTREF and VTT Voltage.
The VTT output voltage is only requiring 20μF of ceramic output capacitance for
stability and fast transient response. The S3 and S5 pins provide the sleep state
for VTT (S3 state)and suspend state (S4/S5 state) for device, when S5 and
S3 are both pulled low the device provides the soft-off for VTT and VTTREF.
The CXSD62106/A is available in 4mmx4mm 24-pin TQFN package, and the

The CXSD62106/A integrates a synchronous buck PWM controller to generate VDDQ, a sourcing and sinking LDO linear regulator to generate VTT. It provides a complete power supply for DDR2 and DDR3 memory
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目录vQS嘉泰姆

1.产品概述                       2.产品特点vQS嘉泰姆
3.应用范围                       4.下载产品资料PDF文档 vQS嘉泰姆
5.产品封装图                     6.电路原理图                   vQS嘉泰姆
7.功能概述                        8.相关产品vQS嘉泰姆

一,产品概述(General Description)         vQS嘉泰姆
      The CXSD62106/A integrates a synchronous buck PWM controller to generatevQS嘉泰姆
VDDQ, a sourcing and sinking LDO linear regulator to generate VTT. It providesvQS嘉泰姆
a complete power supply for DDR2 and DDR3 memory system. It offers the lowestvQS嘉泰姆
total solution cost in system where space is at a premium.vQS嘉泰姆
      The CXSD62106/A provides excellent transient response  and accurate DC vQS嘉泰姆

voltage output in either PFM or PWM Mode. In Pulse Frequency Mode (PFM), the CXSD62106/A provides very high efficiency over light to heavy loads with loading-modulated switching frequencies. On TQFN4x4- 24A package, the Forced PWM vQS嘉泰姆

Mode works nearly at con-stant frequency for low-noise requirements.vQS嘉泰姆
The CXSD62106/A is equipped with accurate current-limit,output under-voltage,vQS嘉泰姆

and output over-voltage protections.A Power-On-Reset function monitors the vQS嘉泰姆

voltage on VCC prevents wrong operation during power on.The LDO is designed vQS嘉泰姆

to provide a regulated voltage with bi-directional output current for DDR-SDRAM termination.The device integrates two power transistors to source or sink current vQS嘉泰姆

up to 1.5A. It also incorporates current-limit and thermal shutdown protection.vQS嘉泰姆

The output voltage of LDO tracks the voltage at VTTREF pin. An internal resistorvQS嘉泰姆

divider is used to provide a half voltage of VDDQ for VTTREF and VTT Voltage. vQS嘉泰姆

The VTT output voltage is only requiring 20μF of ceramic output capacitance forvQS嘉泰姆

 stability and fast transient response. The S3 and S5 pins provide the sleep statevQS嘉泰姆

 for VTT (S3 state)and suspend state (S4/S5 state) for device, when S5 andvQS嘉泰姆
S3 are both pulled low the device provides the soft-off for VTT and VTTREF.vQS嘉泰姆
The CXSD62106/A is available in 4mmx4mm 24-pin TQFN package, and the vQS嘉泰姆

CXSD62106A is available in 3mmx3mm 20-pin TQFN package.vQS嘉泰姆
二.产品特点(Features)vQS嘉泰姆
Buck Controller (VDDQ)vQS嘉泰姆
·  High Input Voltages Range from 3V to 28V Input PowervQS嘉泰姆
Provide 1.8V (DDR2), 1.5V (DDR3) or AdjustablevQS嘉泰姆
Output Voltage from 0.75V to 5.5VvQS嘉泰姆
- ±1% Accuracy Over-TemperaturevQS嘉泰姆
Integrated MOSFET Drivers and Bootstrap DiodevQS嘉泰姆
Excellent Line and Load Transient ResponsesvQS嘉泰姆
PFM Mode for Increased Light Load EfficiencyvQS嘉泰姆
Constant-On-Time Controller SchemevQS嘉泰姆
- Switching Frequency Compensation for PWMModevQS嘉泰姆
- Adjustable Switching Frequency from 100kHzvQS嘉泰姆
to 550kHz in PWM Mode with DC Output CurrentvQS嘉泰姆
Integrated MOSFET Drivers and Bootstrap DiodevQS嘉泰姆
S3 and S5 Pins Control The Device in S0, S3, or S4/S5 StatevQS嘉泰姆
Power Good MonitoringvQS嘉泰姆
70% Under-Voltage Protection (UVP)vQS嘉泰姆
125% Over-Voltage Protection (OVP)vQS嘉泰姆
Adjustable Current-Limit ProtectionvQS嘉泰姆
Using Sense Low-Side MOSFET RDS(ON)vQS嘉泰姆
±1.5A LDO Section (VTT)vQS嘉泰姆
Souring or Sinking Current up to 1.5AvQS嘉泰姆
Fast Transient Response for Output VoltagevQS嘉泰姆
Output Ceramic Capacitors Support at Least 10μF MLCCvQS嘉泰姆
VTT and VTTREF Track at Half the VDDQSNS by Internal DividervQS嘉泰姆
±20mV Accuracy for VTT and VTTREFvQS嘉泰姆

Independent Over-Current-Limit (OCL) vQS嘉泰姆

Thermal Shutdown ProtectionvQS嘉泰姆

QFN-24 4mmx4mm Thin Package (TQFN4x4-24A)vQS嘉泰姆
for CXSD62106 and QFN-20 3mmx3mm ThinvQS嘉泰姆
Package (TQFN3x3-20) for CXSD62106AvQS嘉泰姆
Lead Free and Green Devices Available
vQS嘉泰姆

三,应用范围 (Applications)vQS嘉泰姆


DDR2, and DDR3 Memory Power SuppliesvQS嘉泰姆
SSTL-2 SSTL-18 and HSTL TerminationvQS嘉泰姆
四.下载产品资料PDF文档 vQS嘉泰姆


需要详细的PDF规格书请扫一扫微信联系我们,还可以获得免费样品以及技术支持vQS嘉泰姆

 QQ截图20160419174301.jpgvQS嘉泰姆

五,产品封装图 (Package)vQS嘉泰姆


blob.pngblob.pngvQS嘉泰姆

六.电路原理图vQS嘉泰姆


blob.pngvQS嘉泰姆

七,功能概述vQS嘉泰姆


Layout Consideration (Cont.)vQS嘉泰姆

· Keep the switching nodes (UGATE, LGATE, BOOT, and PHASE) away from sensitive small signal nodesvQS嘉泰姆
(VDDQSET, VTTREF, CS, and MODE) since these nodes are fast mov ing signals. Therefore, keep tracesvQS嘉泰姆
to these nodes as short as possible and there should be no other weak signal traces in parallel with thesesvQS嘉泰姆
traces on any layer.vQS嘉泰姆
 The signals going through theses traces have both high dv/dt and high di/dt, with high peak charging andvQS嘉泰姆
discharging current. The traces from the gate drivers to the MOSFETs (UGATE and LGATE) should be shortvQS嘉泰姆
and wide.vQS嘉泰姆
Place the source of the high-side MOSFET and the drain of the low-side MOSFET as close as possible. Mini-vQS嘉泰姆
mizing the impedance with wide layout plane between the two pads reduces the voltage bounce of the node.
ceramic capacitor near the drain of the high-side MOSFET as close as possible. The bulk capacitors arevQS嘉泰姆
also placednear the drain).vQS嘉泰姆
The input capacitor should be near the drain of the up per MOSFET; the high quality ceramic decoupling ca-vQS嘉泰姆
pacitor can be put close to the VCC and GND pins; the VTTREF decoupling capasitor should be close to thevQS嘉泰姆
VTTREF pin and GND; the VDDQ and VTT output ca-pacitors should be located right across their output pinvQS嘉泰姆
as clase as possible to the part to minimize parasitics.vQS嘉泰姆
The input capacitor GND should be close to the output capacitor GND and the lower MOSFET GND.vQS嘉泰姆
· The drain of the MOSFETs (VIN and PHASE nodes) should be a large plane for heat sinking. And PHASEvQS嘉泰姆
pin traces are also the return path for UGATE. Connect this pin to the converter’s upper MOSFET source.vQS嘉泰姆
· The CXSD62106/A used ripple mode control. Build the resistor divider close to the VDDQSET pin so that thevQS嘉泰姆
high imped ance trace is shorter when the output volt-age is in ad justable mode. And the VDDQSET pinvQS嘉泰姆
traces can’t be closed to the switching signal traces (UGATE, LGATE, BOOT, and PHASE)vQS嘉泰姆
 The PGND trace should be a separate trace, and inde pendently go to the source of the low-side MOSFETsvQS嘉泰姆
for current limit accuracy.Decoupling capacitor, the resistor dividers, boot capacitors, and current limit stetting resistor should be close their pins. (For example, place the decouplingvQS嘉泰姆

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