The CXMS5203 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other batter powered circuits, and low in-line power loss are needed in a very small outline surface mount package.
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[ CXMS5203 ]"
目录
1.产品概述 2.产品特点 3.应用范围 4.技术规格书下载（PDF文档）
一.产品概述
The CXMS5203 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other batter powered circuits, and low in-line power loss are needed in a very small outline surface mount package.
二.产品特点
z 20V/6.0A, RDS(ON) = 27mΩ (Typ.) @VGS = 10V
z 20V/5.0A, RDS(ON) = 30mΩ @VGS = 4.5V
z 20V/4.5A, RDS(ON) = 34mΩ @VGS = 2.5V
z 20V/4.0A, RDS(ON) = 40mΩ @VGS = 1.8V
z Super high density cell design for extremely low RDS(ON)
z Exceptional on-resistance and Maximum DC current capability
z SOT-23-3L package design
三.应用范围
四.技术规格书（产品PDF)
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五.产品封装图
六.电路原理图
七.相关芯片选择指南 更多的同类产品......
| MOSFET | |
| 型号 | 说明 |
| CXMS5202 | 2A N MOS |
| CXMS5203 | 4A/ 20V NMOS |
| CXMS5206 | 30V/4A NMOS |
| CX15N10 | 15A-100V NMOS |
