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首页 > Products > Power Device > P-channel MOSFETs >The CXCP5377 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
The CXCP5377 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

The CXCP5377 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance

The CXCP5377 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
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   产品概述 返回TOPP1t嘉泰姆

The CXCP5377 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.

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   产品特点 返回TOPP1t嘉泰姆

● RDS(ON)≦215mΩ@VGS=-10V P1t嘉泰姆

● RDS(ON)≦260mΩ@VGS=-4.5V P1t嘉泰姆

● Super high density cell design for extremely low RDS(ON) P1t嘉泰姆

● Exceptional on-resistance and maximum DC current capability P1t嘉泰姆

● Capable doing Cu wire bondingP1t嘉泰姆

   应用范围 返回TOPP1t嘉泰姆

● Power Management P1t嘉泰姆

● Portable Equipment P1t嘉泰姆

● Battery Powered System P1t嘉泰姆

● Load SwitchP1t嘉泰姆

   技术规格书（产品PDF) 返回TOP P1t嘉泰姆

     需要详细的PDF规格书请扫一扫微信联系我们，还可以获得免费样品以及技术支持！P1t嘉泰姆

 QQ截图20160419174301.jpgP1t嘉泰姆

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CXCP5367DP1t嘉泰姆

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CXCP5367DRP1t嘉泰姆

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350mΩP1t嘉泰姆

DFN1006-3LP1t嘉泰姆

CXCP5367EP1t嘉泰姆

P沟道P1t嘉泰姆

-12VP1t嘉泰姆

-12VP1t嘉泰姆

-0.7VP1t嘉泰姆

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-7AP1t嘉泰姆

95mΩP1t嘉泰姆

SOT23P1t嘉泰姆

CXCP5367KRP1t嘉泰姆

P沟道P1t嘉泰姆

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CXCP5368P1t嘉泰姆

P沟道P1t嘉泰姆

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-12VP1t嘉泰姆

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39mΩP1t嘉泰姆

SOT23P1t嘉泰姆

CXCP5368BP1t嘉泰姆

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-12VP1t嘉泰姆

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39mΩP1t嘉泰姆

DFN2*2-6P1t嘉泰姆

CXCP5377P1t嘉泰姆

P沟道P1t嘉泰姆

-60VP1t嘉泰姆

-20VP1t嘉泰姆

-3.0VP1t嘉泰姆

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170mΩP1t嘉泰姆

SOT-23-3LP1t嘉泰姆

CXCP5376P1t嘉泰姆

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-40VP1t嘉泰姆

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SOT23-6LP1t嘉泰姆

CXCP5381P1t嘉泰姆

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Next▶:The CXCP5376 uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch and battery protection applications

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