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首页 > Products > Power Device > P-channel MOSFETs >P-Channel Enhancement Mode Power MOSFET CX16P12D，advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages
P-Channel Enhancement Mode Power MOSFET CX16P12D，advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages

The CX16P12D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages .This device is suitable for use as a load switching application and a wide variety of other applications.

P-Channel Enhancement Mode Power MOSFET CX16P12D，advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages
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   产品概述 返回TOPhGl嘉泰姆

The CX16P12D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages .This device is suitable for use as a load switching application and a wide variety of other applications.

   产品特点 返回TOPhGl嘉泰姆

● VDS = -12V,ID = -16A hGl嘉泰姆

RDS(ON) < 22mΩ @ VGS=-2.5V hGl嘉泰姆

RDS(ON) < 18mΩ @ VGS=-4.5V hGl嘉泰姆

● Advanced trench MOSFET process technology hGl嘉泰姆

● Ultra low on-resistance with low gate chargehGl嘉泰姆

   应用范围 返回TOPhGl嘉泰姆

● PWM applications hGl嘉泰姆

● Load switch hGl嘉泰姆

● Battery charge in cellular handsethGl嘉泰姆

   技术规格书（产品PDF) 返回TOP hGl嘉泰姆

     需要详细的PDF规格书请扫一扫微信联系我们，还可以获得免费样品以及技术支持！hGl嘉泰姆

 QQ截图20160419174301.jpghGl嘉泰姆

产品封装图 返回TOPhGl嘉泰姆

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电路原理图 返回TOPhGl嘉泰姆

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Next▶:CXCP5367 CXCP5367A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch

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