CXMS5204 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required. The product is in a very small outline surface mount package.
z -20V/-3.3A, RDS(ON) = 36m-ohm (Typ.) @VGS = -10V
z -20V/-2.8A, RDS(ON) = 45m-ohm @VGS = -4.5V
z -20V/-2.3A, RDS(ON) = 55m-ohm @VGS = -1.8V
z Super high density cell design for extremely low RDS(ON)
z Exceptional on-resistance and maximum DC current capability
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[ CXMS5204 ]"
目录
1.产品概述 2.产品特点 3.应用范围 4.技术规格书下载（PDF文档）
一.产品概述
CXMS5204 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required. The product is in a very small outline surface mount package.
二.产品特点
z -20V/-3.3A, RDS(ON) = 36m-ohm (Typ.) @VGS = -10V
z -20V/-2.8A, RDS(ON) = 45m-ohm @VGS = -4.5V
z -20V/-2.3A, RDS(ON) = 55m-ohm @VGS = -1.8V
z Super high density cell design for extremely low RDS(ON)
z Exceptional on-resistance and maximum DC current capability
z SOT-23-3L package design
三.应用范围
四.技术规格书（产品PDF)
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五.产品封装图
六.电路原理图
七.相关芯片选择指南 更多的同类产品......
| MOSFET | |
| 型号 | 说明 |
| CXMS5207 | 30V/4A PMOS |
| CXMS5208A | 5A PMOS |
| CXMS5209 | 5A/30V 双PMOS |
| CXMS5204 | 3.5A/ 20V PMOS |
| CXMS5205 | 4A/ 30V PMOS |
| CXMS5201 | 2A P MOS |
