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CXRT2130 Low Power Microwave Infrared Induction Chip: Characteristics, Applications, and Design Guidelines

CXRT2130 is a mixed signal processing chip designed specifically for microwave and infrared sensing. It is manufactured using COMS technology and operates within a voltage range of+3V to+6V. Its core advantage lies in ultra-low static power consumption (at 3V)At 45 μ A and 5V75μA), Especially suitable for battery powered systems (such as wireless induction lights, security equipment). The chip integrates high input impedance operational amplifiers, dual threshold comparators, delay timers, and state controllers, greatly simplifying peripheral circuits and reducing overall costs.

CXRT2130 Low Power Microwave Infrared Induction Chip: Characteristics, Applications, and Design Guidelines
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Product introduction

1、 Chip Overview

        CXRT2130  It is a mixed signal processing chip designed specifically for microwave and infrared sensing, usingCOMS processManufacturing, operating voltage range+3V~+6VIts core advantage lies inUltra low static power consumption(3V<45μ); A. <75μ at 5V; A), Especially suitable for battery powered systems (such as wireless induction lights, security equipment). The chip integrates high input impedance operational amplifiers, dual threshold comparators, delay timers, and state controllers, greatly simplifying peripheral circuits and reducing overall costs.bpF嘉泰姆


2、 Core Features

2.1) Minimalist peripheral designbpF嘉泰姆

2.1.1) Only the first stage operational amplifier gain (through R2/R3 resistors) and oscillator RC element (Cr capacitor+RT resistor) need to be configured.bpF嘉泰姆

2.1.2) Built in reference voltage source, eliminating the need for external reference circuits.bpF嘉泰姆

2.2) Intelligent trigger controlbpF嘉泰姆

2.2.1) Repetitive/Non Repetitive Trigger Mode(Controlled by pin A):bpF嘉泰姆

2.2.1.1)A=0Cannot be triggered repeatedly. After the first signal is triggered, it enters a fixed delay (Tx)+lockout (Ti) cycle, during which new signals are ignored.bpF嘉泰姆

2.2.1.2)A=1Repeatable triggering, new signals during the Tx phase will reset the delay timer, extending the output time.bpF嘉泰姆

2.2.2) Trigger prohibition terminal (VC pin)VC< 0.2VddForced output low level, can be connected to a photoresistor to achieve“ Closed during the day and enabled at night;.bpF嘉泰姆

2.3) High driving capability outputThe OUT pin can directly drive the relay (at 5V); 25mA, 3V± 10mA), No additional amplification circuit is required.bpF嘉泰姆


3、 Typical application scenarios

Application field Functional Description
Automatic lighting system Human body induction triggers LED light, delayed shutdown
Security alarm Infrared signal detects abnormal movement and alerts
Automatic door control Microwave induction triggers motor to open door
Intelligent dryer Sensing human body automatic start stop

4、 Guidelines for Key Circuit Design

4.1. Oscillatory frequency configuration

The oscillation period is determined by the formula;Tosc = 0.4 × RT × Cr × (RT/(RT-20K))  Decision (Unit: RT=kΩ); , Cr=nF, Tosc=μ s):

4.1.1) Example:RT=100kΩ , Cr=1nF → Tosc=50μ s → Frequency;f=20kHz.bpF嘉泰姆

4.1.2) AttentionRT needs to be>100kΩ To ensure stability.bpF嘉泰姆

4.2. Delay and blockade time setting

The timing is determined by the suffix of the chip model (K=Tx/Ti):
model Tx (Delay) Ti (blockade) K value Applicable scenarios
CXRT2130A 100000 cycles 20000 cycles five Short latency (<15 seconds)
CXRT2130G 100000 cycles 2000 cycles fifty Long blockade (anti-interference)

Total timet = (Tx + Ti) × Tosc(Example: Tosc=50μ); At s, CXRT2130D total delay& amp; 5.25 seconds).bpF嘉泰姆

4.3. Operational amplifier gain adjustment

First level gain;A1 = R3/R2Total gain;A = A1 × thirty(Fixed second stage gain):bpF嘉泰姆

4.3.1) Example:R2=10kΩ , R3=3MΩ → A1=300 → The total gain is 9000.bpF嘉泰姆

4.3.2) By adjusting R3, the detection distance of the infrared probe can be changed (Figure 8.5a).bpF嘉泰姆


5、 Electrical characteristics and packaging

5.1) Limit parametersbpF嘉泰姆

5.1.1) Power supply voltage: -0.3V~+7VbpF嘉泰姆

5.1.2) Working temperature: -45 ℃~+85 ℃bpF嘉泰姆

5.2) Packaging OptionsbpF嘉泰姆

5.2.1)SOP8Compact patch packaging, suitable for high-density PCBs.bpF嘉泰姆

5.2.2)CPC8Direct insertion packaging, convenient for manual soldering.bpF嘉泰姆


6、 Design considerations

6.1) Anti interference designbpF嘉泰姆

6.1.1) Use LDO (such as HT7533) to isolate the VDD power supply and suppress voltage fluctuations caused by load switching.bpF嘉泰姆

6.1.2) Add a high-frequency filtering capacitor (as shown in C3 of Figure 8.5a) to the input stage of the operational amplifier.bpF嘉泰姆

6.2) Light sensitive control schemeConnect the voltage divider of the photoresistor to the VC pin to achieve threshold control of light intensity (VC>0.2VDD enabled).bpF嘉泰姆


Conclusion

          CXRT2130 withHigh integration, ultra-low power consumption, and flexible triggering logicBecoming an ideal solution for microwave infrared induction design. Developers can quickly adapt to scenarios such as security, smart homes, and automation equipment by adjusting peripheral RC parameters, operational amplifier gains, and model suffixes (K values), significantly shortening development cycles and reducing BOM costs.bpF嘉泰姆

Extended applicationBy combining photoresistors with repeatable triggering mode (A=1), it is possible to develop“ At night, the lights automatically turn on when there is someone, and the lights turn off after a delay when there is no one; The intelligent streetlight system.bpF嘉泰姆

Technical Specifications (Product PDF);

      For detailed PDF specifications, please scan WeChat to contact us. You can also receive free samples and technical supportbpF嘉泰姆
       
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   Product packaging diagram;bpF嘉泰姆


   bpF嘉泰姆

   Circuit schematic diagram;bpF嘉泰姆


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   Selection Guide for Related Chips;                More similar products .....bpF嘉泰姆


Microwave infrared induction; Infrared Induction
model Working Voltage quiescent current feature encapsulation remark
CXRT2124 3-5V 50uA@VDD =3V low power consumption SOP16 Microwave infrared induction compatible with BISS0001
100uA@VDD =5V
CXRT2122 3-6V 35uA@VDD =3V low power consumption SOP8 The microwave infrared induction package is small, and the CXRT2124 has a simpler peripheral design
65uA@VDD =5V
CXRT2130 3-6V 45uA@VDD =3V low power consumption SOP8\CPC8 Microwave infrared induction is simpler than the CXRT2122 peripheral, and it lights up during the day when it is in a photosensitive state
75uA@VDD =5V
CXRT2131 3-5.5V 45uA@VDD =3V low power consumption SOP8\CPC8 Under microwave infrared induction photosensitive state, the light does not turn on during the day
75uA@VDD =5V
rolling code
model Working Voltage quiescent current feature encapsulation remark
CXRT2121 3.5-13.0V 1uA low power consumption SOP8 Rolling code encoding chip
Power amplifier chip
model Working Voltage quiescent current Maximum output power efficiency feature encapsulation
CXAR41222 3-5V 3mA@VDD =3V 3W 90% 3W single channel D-class unfiltered audio amplifier SOP8
5mA@VDD =5V
CXAR41218 2.2-5.2V 3.6mA@VDD =3V 3W 90% 3W dual channel unfilteredD-class audio amplifier SOP16
5mA@VDD =5V
CXAR41219 2.5-5.5V 6mA@VDD =5V 3W 88% 3W anti chipping function dual channel no filterD-class audio amplifier SOP16
Operational amplifier comparator; Amplifier
model Working Voltage quiescent current Maximum offset voltage bandwidth feature encapsulation
CXAR41214 2.7-5.5V 80uA 6mV 1M Low power consumption, rail to rail input-output dual channel operational amplifier SOP8
CXAR41215 2.7-5.5V 2.7-5.5V 6mV 4M Low power consumption, rail to rail input-output high-speed dual channel rail to rail operational amplifier chip SOP8
CXAR41327 2.7-5.5V 0.43mA 6mV 6M Operational amplifier comparator, high-speed rail to rail dual channel operational amplifier SOP8
CXAO42299 3-18V 1.5mA 5mV 1M Operational amplifier comparator with four independent operational amplifiers SOP14 
CXAO42300 3-30V 0.7mA 5mV 1M Operational amplifier comparator dual channel operational amplifier chip SOP8 
CXAO42301 2-36V 0.8mA 5mV 1M Operational amplifier comparator, dual independent comparator SOP8