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首页 > Products > Power Device > N and P-channel Bipolar MOSFETs >Cxig200r120kz1 Igbt62 Module-1200v/200A Low Loss Power Module-Variable Frequency Drive and Ups Application-JTM-IC
Cxig200r120kz1 Igbt62 Module-1200v/200A Low Loss Power Module-Variable Frequency Drive and Ups Application-JTM-IC

CXIG200R120KZ1 is a high-performance IGBT power module, which adopts advanced packaging technology and optimized chip design to provide 200A continuous current capability at 1200V voltage level. This module is specially optimized for industrial application environment, with low saturation voltage drop, fast switching characteristics and excellent thermal management capability, and can maintain stable and reliable performance under harsh working conditions.

Cxig200r120kz1 Igbt62 Module-1200v/200A Low Loss Power Module-Variable Frequency Drive and Ups Application-JTM-IC
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Product introduction

CXIG200R120KZ1 IGBT62 module: 1200V/200A low-loss IGBT power solution

In modern industrial power electronic systems, efficient and reliable power switching devices are the core to realize energy conversion. CXIG200R120KZ1 IGBT62 module, as an insulated gate bipolar transistor module designed for medium and high power applications, integrates fast IGBT and optimized diode, with its low conduction loss, excellent switching characteristics and strong short circuit tolerance make it an ideal choice for UPS systems, induction heating equipment and high power converters. This article will comprehensively analyze the technical characteristics, performance advantages and application design points of this module, and provide engineers with complete selection and application guidelines.2QC嘉泰姆


I. Product overview and technical features

CXIG200R120KZ1 is a high-performance IGBT power module, which adopts advanced packaging technology and optimized chip design to provide 200A continuous current capability at 1200V voltage level. This module is specially optimized for industrial application environment, with low saturation voltage drop, fast switching characteristics and excellent thermal management capability, and can maintain stable and reliable performance under harsh working conditions.2QC嘉泰姆

Core technical features:

· Low conduction loss: Optimized VCE(sat) features significantly reduce power loss in conduction state2QC嘉泰姆

· Quick switch capability: Optimized switching features include all trailing losses to improve system efficiency2QC嘉泰姆

· Strong short circuit tolerance: withstand the shortest short circuit condition of 10 seconds to enhance system reliability2QC嘉泰姆

· Temperature stability: wide junction temperature working range (-40 ℃ to 175 ℃) adapt to various environmental conditions2QC嘉泰姆

· Integrated design: modular packaging simplifies system design and improves power density2QC嘉泰姆


II. Limit parameters and safety specifications

2.1. Partial limit parameters of IGBT (Tj = 25℃)

·Collector-emitter voltage:VCES=1200V2QC嘉泰姆

·Gate-emitter voltage:VGES=±20V2QC嘉泰姆

·Collector continuous current: 200A when TC = 100 ℃, 400A when TC = 25 ℃2QC嘉泰姆

·Collector pulse current:ICM=400A(tp=1ms)2QC嘉泰姆

·Maximum power loss:PD=1500W(TC=25℃,TJ=175℃)2QC嘉泰姆

·Short circuit bearing time:tsc=10μs(VCC=600V,VGE≤15V)2QC嘉泰姆

2.2. Partial limit parameters of diode

·Reverse repetitive peak voltage:VRRM=1200V2QC嘉泰姆

·Forward continuous current: TC = 200A at 100℃2QC嘉泰姆

·Forward repetitive peak current:IFM=400A(tp=1ms)2QC嘉泰姆

2.3. Module overall parameters

·Insulation withstand voltage: Viso = 2500V(50Hz,1 minute)2QC嘉泰姆

·Working junction temperature range: TOP =-40 ℃ to 150 ℃2QC嘉泰姆

·Storage Temperature range: Tstg =-40 ℃ to 150 ℃2QC嘉泰姆

·Installation torque: power terminal M5 screw 2.5-5.0N · m, install M6 screw 3.0-5.0N · m2QC嘉泰姆

·Module weight: 160g2QC嘉泰姆


III. Electrical characteristics and performance analysis

3.1. Static characteristics of IGBT (Tj = 25℃)

·Threshold voltage: VGE(th)= 5.5V typical value (IC = 1mA,VCE = VGE)2QC嘉泰姆

·Saturation pressure drop:VCE(sat)=2.2V(Tj=25℃,IC=200A),2.5V(Tj=150℃)2QC嘉泰姆

·Leakage current: ICES = 1.0mA maximum (VGE = 0V,VCE = VCES)2QC嘉泰姆

·Input capacitance:Cies=19.8pF(VCE=25V,VGE=0V,f=1MHz)2QC嘉泰姆

·Internal gate resistance:Rgint=0.4Ω2QC嘉泰姆

3.2. Dynamic characteristics of IGBT (test conditions: VCC = 600V,IC = 200A,VGE = ± 15V,L = 525 μH,Rg = 10Ω)

·Conduction characteristics:td(on)=109ns(25℃),94ns(150℃);tr=141ns(25℃),150ns(150℃)2QC嘉泰姆

·Shutdown characteristics:td(off)=472ns(25℃),500ns(150℃);tf=95ns(25℃),114ns(150℃)2QC嘉泰姆

·Switching Loss:Eon=27.6mJ(25℃),37mJ(150℃);Eoff=12.6mJ(25℃),15.2mJ(150℃)2QC嘉泰姆

3.3. Diode characteristics

·Forward pressure drop:VFM=2.8V(Tj=25℃,IF=200A),2.3V(Tj=150℃)2QC嘉泰姆

·Reverse Recovery:Ir=55.4A(25℃),95.0A(150℃);Qrr=7.1μC(25℃),19.5μC(150℃)2QC嘉泰姆

·Energy recovery:Erec=1.9mJ(25℃),6.0mJ(150℃)2QC嘉泰姆


IV. Thermal management and reliability design

Efficient thermal management is the key to ensure long-term reliable operation of IGBT module. CXIG200R120KZ1 provides perfect guidance on thermal parameters:2QC嘉泰姆

·IGBT junction thermal resistance:RθJC=0.1K/W2QC嘉泰姆

·Diode junction thermal resistance: R & theta;JC = 0.15K/W (typical)2QC嘉泰姆

·Shell-radiator thermal resistance:RθCS=0.1K/W2QC嘉泰姆

In the actual heat dissipation design, engineers need to calculate the required radiator specifications according to the maximum power loss of the system and the working environment temperature to ensure that the junction temperature of the module is always kept within the safe range of 175℃. The compact package design and optimized thermal path of the module enable the system to achieve higher power density.2QC嘉泰姆


V. Detailed explanation of typical application fields

5.1. Different broken power system

In UPS applications, CXIG200R120KZ1 low conduction loss and fast switching characteristics can significantly improve system efficiency, while its strong short circuit tolerance ensures system reliability under abnormal grid conditions. The optimized switching characteristics of the module also help reduce EMI noise and simplify filtering design.2QC嘉泰姆

5.2. Induction heating equipment

For induction heating applications, the high frequency switching capability and excellent thermal characteristics of the module enable it to achieve accurate power control and high energy conversion efficiency. Its stable temperature characteristics and low parasitic parameters ensure long-term reliability under frequent switching conditions.2QC嘉泰姆

5.3. High power converter

In industrial AC-DC and DC-AC converters, the 1200V/200A power processing capability provided by this module can meet most medium power application requirements. The optimized switching loss balance enables the system to work at high switching frequencies, reducing the volume of passive components and improving the power density.2QC嘉泰姆

5.4. Electric welding machine power supply

In modern electric welding equipment, the fast switching characteristics and strong short circuit capability of the module are especially suitable for frequent short circuit conditions, which can provide stable and reliable welding performance and prolong the service life of the equipment.2QC嘉泰姆


VI. Key points of system design and optimization suggestions

6.1. Driver circuit design

·Driving voltage: We recommend that you use a drive voltage of 15V/-8v to ensure full conduction and reliable shutdown.2QC嘉泰姆

·Gate resistance: optimize external gate resistance according to switching speed and EMI requirements, typical value 10Ω2QC嘉泰姆

·Driving Capability: ensure that the driver circuit can provide sufficient peak current to meet the gate charge requirements of the module2QC嘉泰姆

6.2. Protection circuit design

·Overcurrent protection: use desaturation detection or Hall current sensor to achieve fast microsecond protection2QC嘉泰姆

·Over-temperature protection: monitor the temperature of the radiator and implement classified protection based on junction temperature estimation.2QC嘉泰姆

·Voltage clamp: use appropriate buffer circuit to suppress voltage spikes during shutdown2QC嘉泰姆

6.3 PCB and layout optimization

·Low inductance design: minimize the parasitic inductance of the main power loop and reduce switching overrush2QC嘉泰姆

·Drive isolation: ensure that the gate drive signal is not interfered by the power part2QC嘉泰姆

·Thermal interface optimization: use high-quality thermal conductive materials to ensure good thermal contact between the module and the radiator2QC嘉泰姆


VII. Performance advantages and selection guidance

CXIG200R120KZ1 has obvious advantages in similar IGBT module:2QC嘉泰姆

·Optimized loss balance: achieve the best balance between conduction loss and switching loss to improve the overall efficiency of the system2QC嘉泰姆

·Strong reliability: 10 seconds short circuit tolerance and wide temperature range ensure stable operation in harsh environments2QC嘉泰姆

·Simplify system design: modular packaging reduces the number of external components and reduces system complexity and cost2QC嘉泰姆

·Wide applicability: covers a variety of application scenarios from UPS to industrial heating, providing design flexibility2QC嘉泰姆

During selection, engineers should comprehensively consider the voltage/current requirements, switching frequency, heat dissipation conditions and reliability requirements of the system to ensure that the selected modules can meet the application requirements and leave appropriate design margin.2QC嘉泰姆


VIII. Technical support and resource acquisition

JTM-IC provides complete technical support services for the CXIG200R120KZ1 IGBT62 module, including:2QC嘉泰姆

·Detailed technical documentation: data sheets, application notes, and reliability reports2QC嘉泰姆

·Reference Design: complete circuit scheme and parameter calculation for typical applications2QC嘉泰姆

·Simulation Model: device models that support mainstream simulation platforms2QC嘉泰姆

·Sample Service: provide sample testing and evaluation support for qualified customers2QC嘉泰姆

Our technical team has rich experience in power electronics applications and can provide customers with full-process technical support from conceptual design to mass production to ensure the smooth progress and successful mass production of the project.2QC嘉泰姆


IX. Conclusion

CXIG200R120KZ1 IGBT62 module has become the preferred power solution in the field of industrial power electronics due to its excellent performance characteristics, strong reliability and wide application adaptability. Whether in traditional Industrial Drive, UPS system or demanding induction heating and welding equipment, this module can provide designers with high performance and high reliability power switch solutions. Choosing CXIG200R120KZ1 means choosing optimized system efficiency, simplified design and long-term operation reliability.2QC嘉泰姆

JTM-IC as a professional power semiconductor supplier, we are always committed to providing customers with high-quality products and comprehensive technical support. Welcome to the official websitejtm-ic.comGet detailed technical information, application plans and sample application information for CXIG200R120KZ1, and our professional technical team will provide you with personalized technical consulting services at any time.2QC嘉泰姆


10. Download the relevant chip selection guide -More similar products....2QC嘉泰姆

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