CXIG150R120KZ1_IGBT62 is a IGBT module designed for medium and high power applications, with 1200V collector-emitter withstand voltage (V voltage CES voltage) and 150A continuous collector current (I voltage C voltage), suitable for demanding industrial environments. This module not only has low saturation voltage drop and optimized switching loss, but also integrates fast recovery diode to effectively improve the efficiency and reliability of the whole machine.
In today's high-efficiency power electronic system, insulated gate bipolar transistor (IGBT) module has become an industrial frequency conversion, uninterruptible power supply (UPS), with its excellent switching characteristics and high withstand voltage capability, indispensable core components in induction heating and welding equipment. This article will introduce a high-performance IGBT module in depth--CXIG150R120KZ1(IGBT62), and comprehensively analyze its structural characteristics, electrical parameters, application scenarios and selection suggestions, aiming at providing valuable reference for engineers and procurement personnel.
I. Product Overview
CXIG150R120KZ1_IGBT62 is a IGBT module designed for medium and high power applications1200V collector-emitter withstand voltageAnd150A continuous collector current (i₍ c₎), suitable for demanding industrial environments. This module not only hasLow saturation pressure dropAndOptimized switching loss, it also integrates fast recovery diode to effectively improve the efficiency and reliability of the whole machine.
Second, the main features
2.1. Excellent electrical performance
· Low conduction loss: under the condition of rated current 150A and grid voltage 15V, the typical value of saturation voltage drop v₍ CE(sat) is only 2.7V (tⱼ = 25°C), effectively reducing on-state loss.
· High-speed switching capability: The module is optimized for fast switching applications, with short conduction/shutdown delay and rise/fall time, significantly reducing the energy loss during switching.
· Strong short circuit tolerance: The module can withstand at least 10 seconds of short-circuit current under 600V bus voltage to improve the reliability of the system in the fault state.
2.2. Integrated diode performance
The built-in anti-parallel diode of the module hasLow forward voltage dropWith excellent reverse recovery characteristics, the reverse recovery charge Q = is only 6.6 μC when T = 25°C, which is helpful to reduce switching noise and electromagnetic interference (EMI).
2.3. Thermal management and reliability
·Low thermal resistance design: the thermal resistance of IGBT junction shell R... & theta;JC... is 0.13 K/W, the diode part is 0.3 K/W, and the heat dissipation performance is excellent.
·Wide operating temperature range: The junction temperature can reach up to 175°C, which is suitable for harsh environments from-40°C to 150°C.
·High insulation performance: the isolation voltage of the module is up to 2500V, which ensures the safe operation of the system.
Third, typical application fields
CXIG150R120KZ1 is applicable to a variety of high-power conversion scenarios, including but not limited:
·UPS system: provides high efficiency and high reliability inverter output.
· Induction heating equipment: support high frequency and high current switch, high heating efficiency.
· Industrial Welding machine: stable output characteristics are applicable to various welding processes.
· High Power AC/DC converter: such as solar inverter, frequency conversion drive, etc.
IV. Key Parameter Analysis
| Parameter | Symbol | Condition | Numerical value |
|---|---|---|---|
| Collector-emitter voltage | V₍CES ₎ | - | 1200 V |
| Continuous collector current | I₍C ₎ | T꜀=100°C | 150 A |
| Gate threshold voltage | V₍GE(th) ₎ | I꜀=1mA | 5.4V (typical) |
| Saturation pressure drop | V₍CE(sat) ₎ | I꜀=150A, V₍GE₎=15V | 2.7 V(25°C) |
| Switching Loss (on) | E₍on ₎ | V₍CC₎=600V, Rǥ=10Ω | 13.5 mJ(25°C) |
| Switching Loss (off) | E₍off ₎ | Same as above | 6.3 mJ(25°C) |
V. Suggestions on selection and use
When selecting CXIG150R120KZ1, pay attention to the following points:
5.1. Gate Drive Design: We recommend that you use ± 15v driving voltage and connect 10Ω gate resistor in series to balance the switching speed and noise.
5.2. Heat dissipation system design: We recommend that you use a combination of thermally conductive silicone grease and radiator to control the shell temperature not exceeding 100°C to ensure the long-term stable operation of the module.
5.3. Short circuit protection: Although the module has short circuit tolerance, we recommend that you configure a fast protection circuit to limit the fault current and time.
VI. Conclusion
As an excellent performance IGBT power module, csig150r120kz1_igbt62 combines high efficiency, high reliability and good thermal management capabilities, and is very suitable for modern industrial power supply and drive systems. If you are looking for a high-voltage high-current module suitable for UPS, induction heating or welding equipment, CXIG150R120KZ1 will be the ideal choice.
For more technical details, samples or purchases, please visitJTM-IC official website (jtm-ic.com), we provide you with comprehensive product support and technical services.
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