CXIG300R120KX1 IGBT62 is a high-performance IGBT power module, which adopts advanced DBC (directly combined with copper) technology to isolate copper base plate and integrates gate resistance and fast recovery diode. The rated voltage of the module is 1200V, the rated current is 300A, the saturation voltage is reduced to 1.85V, and the switching frequency is as high as 20kHz, which perfectly meets the requirements of modern power electronic systems for high efficiency, high power density and high reliability.
CXIG300R120KX1 IGBT62 module: 1200V/300A fourth generation fast IGBT comprehensive analysis
In the field of industrial power electronics, insulated gate bipolar transistor (IGBT), as the core power switching device, its performance directly determines the efficiency, reliability and power density of the whole system. CXIG300R120KX1 IGBT62 module, as a 1200V/300A IGBT power module adopting the fourth generation fast trench technology, has become an AC frequency conversion driver with its excellent switching characteristics, excellent heat dissipation performance and highly integrated design, ideal for applications such as UPS systems and high-end welding machines. This paper will deeply analyze the technical characteristics, performance parameters and application design points of this module, providing engineers with comprehensive selection reference.
I. Product overview and technical positioning
CXIG300R120KX1 IGBT62 is a high-performance IGBT power module, which adopts advanced DBC (directly combined with copper) technology to isolate copper base plate and integrates gate resistance and fast recovery diode. The rated voltage of the module is 1200V, the rated current is 300A, the saturation voltage is reduced to 1.85V, and the switching frequency is as high as 20kHz, which perfectly meets the requirements of modern power electronic systems for high efficiency, high power density and high reliability.
Based on the fourth-generation IGBT technology and the fourth-generation CAL diode technology, this module realizes the optimal balance between switching characteristics and conduction loss, and is especially suitable for harsh application environments working at high switching frequencies. Its compact modular design and excellent thermal management capability greatly simplify the system design and improve the overall performance.
II. Features of core functions
· Advanced technology platform: IGBT4 4 4th generation fast trench technology is adopted to significantly reduce switching loss
· Optimize diode design: Integrated CAL4 fourth generation soft switching diode to reduce reverse recovery Current
· Efficient heat dissipation structure: copper base plate technology provides excellent thermal conductivity and power cycling capability
· Highly integrated: Built-in gate resistor simplifies the design of external drive circuit
· High frequency working ability: supports switching frequencies up to 20kHz, suitable for high frequency applications
· Low conduction loss: The typical saturation pressure drop is 1.85V, which improves the system efficiency.
· High Reliability: junction temperature range-40 ℃ to 175 ℃ to ensure long-term stable operation
III. Limit parameters and safety operation area
3.1. Partial limit parameters of IGBT (Tj = 25℃)
·Collector-emitter voltage:VCES=1200V
·Collector DC current: 422A when Tc = 25 ℃, 324A when Tc = 80 ℃
·Collector pulse current: ICnom = 300A,ICRM = 900A(3 times the rating)
·Gate-emitter voltage: VGES =-20v to 20V
·Short circuit tolerance:tpec=10μs(VCC=800V,Ti=150℃)
·Working junction temperature: Tj =-40 ℃ to 175 ℃
3.2. Backward-diode limit parameters
·Forward continuous current: 353A when Tc = 25 ℃, 264A when Tc = 80 ℃
·Forward pulse current:IFnom=300A,IFRM=900A
·Surge current capability: IFSM = 1548A(tp = 10ms, sine 180 °)
·Working junction temperature: Tj =-40 ℃ to 175 ℃
3.3. Overall module parameters
·Insulation withstand voltage: Visol = 4000V(AC 50Hz,1 minute)
·Storage Temperature: Tstg =-40 ℃ to 125 ℃
·Installation torque: installation screw 3-5Nm, power terminal screw 2.5-5Nm
These limit parameters define the safe working boundary of the module. In practical application, it is necessary to ensure that all operating conditions are within this range to ensure the long-term reliability of the equipment.
IV. Electrical characteristics and performance parameters
4.1. Static characteristics of IGBT
·Saturation pressure drop: VCE(sat)= 1.85V (typical value, Tj = 25℃),2.25V(Tj = 150℃)
·Threshold voltage: VGE(th)= 5.8V (typical value, VCE = VGE,IC = 12mA)
·Gate resistance: RGint = 2.5 Ω (built-in)
·Input capacitance:Cies=17.6nF(VCE=25V,VGE=0V,f=1MHz)
4.2. Dynamic characteristics of IGBT (Tj = 150℃,VCC = 600V,IC = 300A)
·Activation delay:td(on)=200ns
·Rise time:tr=44ns
·Activation energy:Eon=27mJ
·Shutdown delay:td(off)=450ns
·Fall Time:tf=90ns
·Shutdown energy:Eoff=29mJ
4.3.Backward-diode features
·Forward pressure drop: VF = 2.49V (typical value, Tj = 25℃,IF = 300A)
·Reverse recovery charge:Qrr=54μC(Tj=150℃)
·Reverse Recovery energy:Err=23mJ
These excellent electrical characteristics ensure that the module can still maintain low loss and high efficiency in high frequency switching applications, especially suitable for modern energy-saving power electronic systems.
V. Thermal management and heat dissipation design
Efficient thermal management is the key to ensure reliable work of IGBT module. CXIG300R120KX1 provides complete thermal parameters:
·IGBT junction thermal resistance: Rth(j-c)= 0.11K/W (single IGBT)
·Diode junction thermal resistance: Rth(j-c)= 0.17K/W (single diode)
·Module shell thermal resistance: Rth(j-c)= 0.02-0.038 K/W (entire module)
·Lead resistance:RCC EE=0.25mΩ(Tc=25℃),0.5mΩ(Tc=125℃)
·Recommended Operating temperature: Top =-40 ℃ to 150 ℃
·Shell temperature limit: Tc = 125 ℃ (maximum)
In the actual heat dissipation design, the maximum allowable power loss should be calculated according to the system power level and heat dissipation conditions to ensure that the junction temperature does not exceed the limit value of 175℃. The weight of the module is 325g, and M6 screws should be used during installation and tightened according to the specified torque.
6. Typical application fields
6.1. AC frequency converter drive
In the field of industrial motor drive, the high switching frequency and low loss characteristics of this module enable it to achieve accurate motor control and efficient energy conversion, especially suitable for fans, water pumps, compressor and other high-power frequency conversion applications.
6.2. Different broken power system
For UPS applications, the high reliability and fast switching capability of the module ensure that the system can respond quickly when the power grid is abnormal, provide stable and reliable standby power supply, and improve the efficiency of the whole machine at the same time.
6.3. High-end electric welding equipment
In the 20kHz welding machine, the high frequency working ability of the module enables the welding power supply to realize finer welding control, improve welding quality and efficiency, and reduce the volume and weight of the equipment at the same time.
6.4. Other industrial applications
In addition, this module is widely used in servo drives, induction heating, Photovoltaic Inverter, industrial power supply and other occasions requiring high reliability power conversion.
VII. Key points of system design
7.1. Driver circuit design
·Gate drive voltage: 15V/-8v is recommended to ensure full conduction and reliable shutdown.
·Gate resistance selection: optimize external gate resistance according to switching speed and EMI requirements
·Driving Capability: ensure that the driver circuit can provide sufficient peak current to cope with the gate charge of 1700nC
7.2. Protection circuit design
·Overcurrent protection: uses desaturated detection or current sensor for fast protection
·Over-temperature protection: monitor radiator temperature to prevent overheating damage
·Voltage spike suppression: Suppression of off voltage spikes through buffer circuit
7.3 PCB layout suggestions
·Low inductance layout: reduce parasitic inductance of main power circuit and suppress voltage oscillation
·Gate Drive isolation: ensure that the gate drive signal is not interfered by the power part
·Thermal Design Optimization: provide sufficient heat dissipation area and good heat conduction path
VIII. Competitive advantage and selection guidance
CXIG300R120KX1 IGBT62 module has obvious advantages in similar products:
·Leading Technology: The fourth generation IGBT and CAL diode technology provide excellent performance
·High Integration: Built-in gate resistor simplifies system design and reduces the number of external components
·Reliable and durable: copper base plate and optimized thermal design ensure long-term reliability
·Flexible application: wide operating temperature range and excellent switching characteristics adapt to various application scenarios
During selection, engineers need to conduct comprehensive evaluation according to the system's voltage level, current demand, switching frequency, heat dissipation conditions and other factors to ensure that the selected module can meet the application requirements and leave appropriate margin.
IX. Conclusion
CXIG300R120KX1 IGBT62 module has become the preferred power solution in the field of industrial power electronics due to its excellent performance, high reliability and advanced technical characteristics. Whether it is in the traditional industrial drive, UPS system, or the emerging new energy and high-end equipment manufacturing field, this module can provide strong technical support for system designers. Choosing CXIG300R120KX1 means choosing high performance, high reliability and optimized system cost.
JTM-IC as a professional power semiconductor supplier, we are committed to providing customers with high-quality products and comprehensive technical support. Welcome to the official websitejtm-ic.comGet detailed technical information, application notes and sample application information for CXIG300R120KX1, and our technical team will provide you with professional technical consulting services at any time.
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