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首页 > Products > Power Device > N and P-channel Bipolar MOSFETs >Cxig100r120kz1 Igbt34 Module | 1200v/100A Low-Loss IGBT Power Module-JTM-IC
Cxig100r120kz1 Igbt34 Module | 1200v/100A Low-Loss IGBT Power Module-JTM-IC

Csig100r120kz1_igbt34 is a IGBT module of rated voltage 1200V and rated current 100A, with low conduction loss and excellent switching performance, suitable for medium and high power conversion occasions. The module integrates a fast recovery diode to further improve the overall efficiency and reliability of the system.

Cxig100r120kz1 Igbt34 Module | 1200v/100A Low-Loss IGBT Power Module-JTM-IC
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Product introduction

CXIG100R120KZ1 IGBT34: an efficient and reliable 1200V IGBT power module

In modern power electronic equipment, IGBT (insulated gate bipolar transistor) module is widely used in industrial frequency conversion due to its high withstand voltage, large current carrying capacity and good switching characteristics, uninterruptible power supply (UPS), induction heating and electric welding equipment. This article will introduce in detailCXIG100R120KZ1(IGBT34)This IGBT module with excellent performance is developed from multiple perspectives such as product characteristics, electrical parameters, typical applications and system design suggestions, providing comprehensive technical references for engineers and procurement personnel.Vf9嘉泰姆


I. Product Overview

CXIG100R120KZ1_IGBT34 is a rated voltage1200V, rated current100AIGBT module,Low conduction lossAndExcellent switching performance, suitable for medium and high power conversion occasions. The module integrates a fast recovery diode to further improve the overall efficiency and reliability of the system.Vf9嘉泰姆


Second, core product features

2.1. Excellent electrical characteristics

· Low saturation pressure drop: under the condition of rated current 100A and grid voltage 15V, the typical value of saturation voltage drop VCE(sat) is only2.5V(Tj=25°C)To effectively reduce on-state loss.Vf9嘉泰姆

· High switching efficiency: The module has fast conduction and shutdown characteristics. The typical conduction delay td(on) is 43ns, and the rise time tr is 75ns(Tj = 25°C), which is helpful to reduce the switching loss of the system.Vf9嘉泰姆

· Robust short circuit capability: under 600V bus voltage, the module can withstandShort circuit current of 10 secondsTo improve the reliability of the system under abnormal working conditions.Vf9嘉泰姆

2.2. Built-in diode has excellent performance

Module anti-parallel diodeLow forward voltage drop (VFM = 2.2V @ 100A, 25°C)And good reverse recovery characteristics, still maintain stable performance in high temperature environment, which is helpful to inhibit EMI and improve the efficiency of the whole machine.Vf9嘉泰姆

2.3. Good thermal management and insulation design

· Low thermal resistance structure: the thermal resistance R & theta of the IGBT part is 0.17 K/W, the thermal resistance from the module shell to the radiator is 0.1 K/W, and the heat dissipation efficiency is high.Vf9嘉泰姆

· High insulation strength: module isolation voltage up2500V AC, in line with strict industrial safety standards.Vf9嘉泰姆

· Wide temperature operating range: The highest junction temperature is reached175°C, suitable for ambient temperature from-40°C to 150°C.Vf9嘉泰姆


III. Main application fields

CXIG100R120KZ1 is applicable to a variety of medium and high power power electronic equipment, including:Vf9嘉泰姆

·UPS different power-off: provides high efficiency and high reliability inverter output.Vf9嘉泰姆

·Induction heating system: supports fast switching and high current output, and precise heating control.Vf9嘉泰姆

·Industrial Welding machine: stable output, suitable for various welding process requirements.Vf9嘉泰姆

·High power AC/DC converter: such as solar inverter, motor drive, etc.Vf9嘉泰姆


4. Quick overview of key parameters

Parameter Symbol Test conditions Numerical value
Collector-emitter voltage VCES - 1200 V
Continuous collector current IC TC = 100°C 100 A
Saturation pressure drop VCE(sat) IC=100A, VGE=15V, 25°C 2.5V
Gate threshold voltage VGE(th) IC=1mA 5.8V (typical)
Activation loss Eon VCC=600V, Rg=10Ω, 25°C 10.8 mJ
Shutdown loss Eoff Same as above 4.3 mJ

V. Selection and system design suggestions

5.1. Gate Drive DesignVf9嘉泰姆
Recommended± 15v driving voltage, and concatenated10Ω gate resistanceTo balance the switching speed and noise suppression.
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5.2. Heat dissipation system designVf9嘉泰姆
We recommend that you use high-performance radiator and thermally conductive silicone grease, and the temperature of the control module shell isBelow 100°CTo ensure long-term stable operation.
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5.3. Protection circuit configurationVf9嘉泰姆
Although the module has short circuit tolerance, it is still recommended to configure fast overcurrent and overheating protection circuits to further prolong the service life of the module.
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5.4.Attention for parallel useVf9嘉泰姆
If you need to use it in parallel, make sure that the parameters of each module match and use it appropriately to avoid uneven current.
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VI. Conclusion

As an excellent performance IGBT power module, csig100r120kz1_igbt34 combines high efficiency, high reliability and excellent thermal management capabilities, and is very suitable for modern industrial power supply and drive systems. If you are looking for a cost-effective IGBT solution for medium power UPS, induction heating or welding equipment, CXIG100R120KZ1 is the ideal choice.Vf9嘉泰姆

For detailed data Manual, sample application or purchase support, please visitJTM-IC official website (jtm-ic.com), we provide you with professional product selection support and global supply services.Vf9嘉泰姆


VII. Download the relevant chip selection guide -More similar products....Vf9嘉泰姆

       Meter modulus audio and video half bridge chip. pdf(203.52 KB)