In the modern power electronic system pursuing high efficiency and high power density, the performance of IGBT module directly determines the efficiency and reliability of the whole equipment. CXIG75R120KX1(IGBT34), as a IGBT module adopting advanced trench and field stop technology, has 1250V withstand voltage, 75A rated current and excellent switching characteristics, and is very suitable for high frequency switches, Servo Drive, harsh application scenarios such as welding power supply. This paper will comprehensively analyze the technical characteristics, performance parameters and typical applications of this module, providing engineers with reference for selection and design.
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[ CXIG75R120KX1_IGBT34 ]"
CXIG75R120KX1 IGBT34: high performance 1250V IGBT module, designed for high frequency applications
In the modern power electronic system pursuing high efficiency and high power density, the performance of IGBT module directly determines the efficiency and reliability of the whole equipment.CXIG75R120KX1(IGBT34)As a IGBT module using advanced trench and field stop technology, it has1250V withstand voltage,75A rated currentAnd excellent switching characteristics, it is very suitable for harsh application scenarios such as high frequency switch, Servo Drive, welding power supply, etc. This paper will comprehensively analyze the technical characteristics, performance parameters and typical applications of this module, providing engineers with reference for selection and design.
I. Product Overview
CXIG75R120KX1_IGBT34 is a IGBT module optimized for medium-power and high-frequency applications. Its core features include:
· High short circuit capability: with self-limited short-circuit current characteristics, the system reliability is higher.
· Low switching loss: Groove field stop technology is adopted, with short tail current and fast switching speed.
· Integrated temperature sensor: Monitor module temperature in real time, which is convenient for the system to realize overheating protection.
· Soft recovery diode: Built-in fast soft recovery diode effectively reduces reverse recovery noise and loss.
Second, core product features
2.1. Advanced IGBT chip technology
Module adoptionTrench grid field stop Technology, not only reduces the saturation voltage drop (VCE(sat)), but also makes the conduction loss and switching loss get a good balance. VCE(sat) has positive temperature coefficient, which is convenient for flow sharing design when multiple modules are used in parallel.
2.2. Excellent switching performance
·High speed switch: typical conduction delay td(on) is 33ns, rise time tr is 40ns(Tvj = 125°C), which is suitable for high frequency conversion circuit.
·Low switching loss: under the condition of Tvj = 25°C, the typical value of Eon is 9.3mJ and Eoff is 4.5mJ, which effectively improves the system efficiency.
2.3. Built-in diode has excellent performance
The module integrates fast soft recovery diode with low reverse recovery charge and current peak, which helps reduce EMI and improve overall efficiency, and is especially suitable for freewheeling applications in frequency converters and inverters.
2.4. High integration and reliability
· Integrated temperature sensor: supports real-time temperature monitoring to facilitate the system to implement overheating protection policies.
· High insulation strength: module isolation voltage up3000V AC, in line with industrial safety standards.
· Wide operating temperature range: The highest junction temperature is reached150°C, suitable for harsh environments from-40°C to 150°C.
III. Main application fields
CXIG75R120KX1 is applicable to the following medium and high power and high frequency application scenarios:
· High frequency switching power supply: such as communication power supply, server power supply, etc.
· Welding converter: stable output, suitable for a variety of industrial welding equipment.
· Motion/servo control system: Supports High Dynamic response and precise control.
· UPS different power-off: provides high efficiency and high reliability inverter output.
4. Quick overview of key parameters
| Parameter | Symbol | Test conditions | Numerical value |
|---|---|---|---|
| Collector-emitter voltage | VCES | - | 1250 V |
| Continuous collector current | IC | TC = 80°C | 75 A |
| Saturation pressure drop | VCE(sat) | IC=75A, VGE=15V, 25°C | 2.1V (maximum) |
| Gate threshold voltage | VGE(th) | IC=2.0mA | 5.0-6.8V |
| Activation loss | Eon | VCC=600V, Rg=10Ω, 25°C | 9.3 mJ |
| Shutdown loss | Eoff | Same as above | 4.5 mJ |
| Short circuit bearing time | tsc | VCC=720V, Tj=125°C | 10 μs |
V. Selection and system design suggestions
5.1. Gate Drive Design
Recommended± 15v driving voltage, and concatenated10Ω gate resistanceTo optimize switching speed and suppress voltage spikes.
5.2. Heat dissipation system design
The thermal resistance of the IGBT part of the module is 0.16 K/W. We recommend that you use high-performance radiator and thermal conductive materials to control the shell temperature.Below 80°CTo ensure the long-term stable operation of the module.
5.3. Temperature protection strategy
Use the built-in temperature sensor of the module to cooperate with external circuit or controller to realize overheating protection and improve system reliability.
5.4.High frequency layout suggestions
In high frequency applications, it is suggested to adopt low inductance layout and decoupling design to reduce the influence of parasitic parameters on switching performance.
VI. Conclusion
As an IGBT power module for high frequency and high reliability applications, CXIG75R120KX1_IGBT34 combines advanced trench field stop technology, low switching loss and high integration temperature detection functions, which is very suitable for welding equipment, Servo Drive, UPS and other medium power power electronic systems. If you are looking for an IGBT solution with excellent performance and suitable for high frequency switching scenarios, CXIG75R120KX1 is the ideal choice.
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