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首页 > Products > Power Device > P-channel MOSFETs >The CXCP5367E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as -2.5V
The CXCP5367E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as -2.5V

The CXCP5367E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as -2.5V. This device is suitable for use as a battery protection or in other switching application

The CXCP5367E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as -2.5V
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   产品概述 返回TOP6AU嘉泰姆

The CXCP5367E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as -2.5V. This device is suitable for use as a battery protection or in other switching application.

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   产品特点 返回TOP6AU嘉泰姆

● VDS = -12V,ID =-2.0A 6AU嘉泰姆

RDS(ON)<130mΩ @ VGS =-4.5V 6AU嘉泰姆

RDS(ON)<175mΩ @ VGS =-2.5V 6AU嘉泰姆

 ● High Power and current handing capability 6AU嘉泰姆

● Lead free product is acquired 6AU嘉泰姆

● Surface Mount Package6AU嘉泰姆

   应用范围 返回TOP6AU嘉泰姆

● Battery protection 6AU嘉泰姆

● Load switch 6AU嘉泰姆

● Power management6AU嘉泰姆

   技术规格书（产品PDF) 返回TOP 6AU嘉泰姆

     需要详细的PDF规格书请扫一扫微信联系我们，还可以获得免费样品以及技术支持！6AU嘉泰姆

 QQ截图20160419174301.jpg6AU嘉泰姆

产品封装图 返回TOP6AU嘉泰姆

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电路原理图 返回TOP6AU嘉泰姆

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-1.6A6AU嘉泰姆

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-12V6AU嘉泰姆

-12V6AU嘉泰姆

-0.7V6AU嘉泰姆

-2A6AU嘉泰姆

-7A6AU嘉泰姆

95mΩ6AU嘉泰姆

SOT236AU嘉泰姆

CXCP5367KR6AU嘉泰姆

P沟道6AU嘉泰姆

-20V6AU嘉泰姆

-10V6AU嘉泰姆

-0.65V6AU嘉泰姆

-3A6AU嘉泰姆

-6A6AU嘉泰姆

65mΩ6AU嘉泰姆

SOT-3236AU嘉泰姆

CXCP53686AU嘉泰姆

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-20V6AU嘉泰姆

-12V6AU嘉泰姆

-0.7V6AU嘉泰姆

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39mΩ6AU嘉泰姆

SOT236AU嘉泰姆

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-12V6AU嘉泰姆

-0.7V6AU嘉泰姆

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40mΩ6AU嘉泰姆

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SOT-23-3L6AU嘉泰姆

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-20V6AU嘉泰姆

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6mΩ6AU嘉泰姆

SOP86AU嘉泰姆

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-30V6AU嘉泰姆

-20V6AU嘉泰姆

-1.9V6AU嘉泰姆

-7A6AU嘉泰姆

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30mΩ6AU嘉泰姆

SOP86AU嘉泰姆

CXCP53886AU嘉泰姆

P沟道6AU嘉泰姆

-40V6AU嘉泰姆

-20V6AU嘉泰姆

-2.0V6AU嘉泰姆

-13A6AU嘉泰姆

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12mΩ6AU嘉泰姆

SOP86AU嘉泰姆

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P沟道6AU嘉泰姆

-40V6AU嘉泰姆

-20V6AU嘉泰姆

-1.9V6AU嘉泰姆

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7.5mΩ6AU嘉泰姆

SOP86AU嘉泰姆

CXCP5388B6AU嘉泰姆

P沟道6AU嘉泰姆

-40V6AU嘉泰姆

-20V6AU嘉泰姆

-2.0V6AU嘉泰姆

-7.5A6AU嘉泰姆

-40A6AU嘉泰姆

30mΩ6AU嘉泰姆

SOP86AU嘉泰姆

CXCP53916AU嘉泰姆

双P沟道6AU嘉泰姆

-100V6AU嘉泰姆

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85mΩ6AU嘉泰姆

SOP86AU嘉泰姆

CXCP53926AU嘉泰姆

P沟道6AU嘉泰姆

-22V6AU嘉泰姆

-8V6AU嘉泰姆

-0.69V6AU嘉泰姆

-3A6AU嘉泰姆

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110mΩ6AU嘉泰姆

DFN2*3-86AU嘉泰姆

CXCP53786AU嘉泰姆

P沟道6AU嘉泰姆

-30V6AU嘉泰姆

-20V6AU嘉泰姆

-1V6AU嘉泰姆

-5.0A6AU嘉泰姆

-30A6AU嘉泰姆

◀ Previous:The CXCP5367DR is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology

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Next▶:The CXCP5367KR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V

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