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首页 > Products > Power Device > P-channel MOSFETs >The CXCP5367DR is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology
The CXCP5367DR is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology

The CXCP5367DR is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance

The CXCP5367DR is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology
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   产品概述 返回TOPROT嘉泰姆

The CXCP5367DR is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.

   产品特点 返回TOPROT嘉泰姆

● RDS(ON)= 0.48Ω @VGS=-4.5V ROT嘉泰姆

● RDS(ON)= 0.67Ω @VGS=-2.5V ROT嘉泰姆

● RDS(ON)= 0.95Ω @VGS=-1.8V ROT嘉泰姆

● RDS(ON)= 2.20Ω @VGS=-1.5V ROT嘉泰姆

● Super high density cell design for extremely low RDS(ON) ROT嘉泰姆

● Exceptional on-resistance and maximum DC current capability ROT嘉泰姆

● Capable doing Cu wire bondingROT嘉泰姆

   应用范围 返回TOPROT嘉泰姆

● Power Management in Note book ROT嘉泰姆

● Portable Equipment ROT嘉泰姆

● Battery Powered SystemROT嘉泰姆

   技术规格书（产品PDF) 返回TOP ROT嘉泰姆

     需要详细的PDF规格书请扫一扫微信联系我们，还可以获得免费样品以及技术支持！ROT嘉泰姆

 QQ截图20160419174301.jpgROT嘉泰姆

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◀ Previous:The CXCP5367D is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology

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Next▶:The CXCP5367E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as -2.5V

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