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首页 > Products > Power Device > P-channel MOSFETs >The CXCP5367KR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V
The CXCP5367KR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V

The CXCP5367KR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications

The CXCP5367KR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V
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   产品概述 返回TOPS4I嘉泰姆

The CXCP5367KR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.

   产品特点 返回TOPS4I嘉泰姆

● VDS = -20V,ID = -3A S4I嘉泰姆

RDS(ON) < 140mΩ @ VGS=-2.5V S4I嘉泰姆

RDS(ON) < 110mΩ @ VGS=-4.5V S4I嘉泰姆

● High Power and current handing capability S4I嘉泰姆

● Lead free product is acquired S4I嘉泰姆

● Surface Mount PackageS4I嘉泰姆

   应用范围 返回TOPS4I嘉泰姆

●PWM applications S4I嘉泰姆

●Load switch S4I嘉泰姆

●Power managementS4I嘉泰姆

   技术规格书（产品PDF) 返回TOP S4I嘉泰姆

     需要详细的PDF规格书请扫一扫微信联系我们，还可以获得免费样品以及技术支持！S4I嘉泰姆

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产品封装图 返回TOPS4I嘉泰姆

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Next▶:The CXCP5368 CXCP5368B CXCP5393 ses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V

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