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首页 > Products > Power Device > P-channel MOSFETs >The CXCP5367D is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology
The CXCP5367D is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology

The CXCP5367D is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance

The CXCP5367D is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology
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   产品概述 返回TOPVhg嘉泰姆

The CXCP5367D is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.

   产品特点 返回TOPVhg嘉泰姆

● RDS(ON)= 0.48Ω @VGS=-4.5V Vhg嘉泰姆

● RDS(ON)= 0.67Ω @VGS=-2.5V Vhg嘉泰姆

● RDS(ON)= 0.95Ω @VGS=-1.8V Vhg嘉泰姆

● RDS(ON)= 2.20Ω @VGS=-1.5V Vhg嘉泰姆

● Super high density cell design for extremely low RDS(ON) Vhg嘉泰姆

● Exceptional on-resistance and maximum DC current capability Vhg嘉泰姆

● Capable doing Cu wire bondingVhg嘉泰姆

   应用范围 返回TOPVhg嘉泰姆

● Power Management in Note book Vhg嘉泰姆

● Portable Equipment Vhg嘉泰姆

● Battery Powered SystemVhg嘉泰姆

   技术规格书（产品PDF) 返回TOP Vhg嘉泰姆

     需要详细的PDF规格书请扫一扫微信联系我们，还可以获得免费样品以及技术支持！Vhg嘉泰姆

 QQ截图20160419174301.jpgVhg嘉泰姆

产品封装图 返回TOPVhg嘉泰姆

aVhg嘉泰姆

电路原理图 返回TOPVhg嘉泰姆

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单P沟道低压MOS场效应管Vhg嘉泰姆

型号Vhg嘉泰姆

沟道Vhg嘉泰姆

VDSVhg嘉泰姆

VGSVhg嘉泰姆

VTHVhg嘉泰姆

IDVhg嘉泰姆

IDMVhg嘉泰姆

RDS(on)Vhg嘉泰姆

封装Vhg嘉泰姆

(Max)Vhg嘉泰姆

  

(Typ)Vhg嘉泰姆

(Max)Vhg嘉泰姆

  

(Max)Vhg嘉泰姆

BSS84Vhg嘉泰姆

P沟道Vhg嘉泰姆

-50VVhg嘉泰姆

20VVhg嘉泰姆

-2.0VVhg嘉泰姆

-0.13AVhg嘉泰姆

-0.52AVhg嘉泰姆

8mΩVhg嘉泰姆

SOT23Vhg嘉泰姆

CX08P12DVhg嘉泰姆

P沟道Vhg嘉泰姆

-12VVhg嘉泰姆

-8VVhg嘉泰姆

-1.0VVhg嘉泰姆

-8AVhg嘉泰姆

-28AVhg嘉泰姆

28mΩVhg嘉泰姆

DFN2*2-6Vhg嘉泰姆

CX16P12DVhg嘉泰姆

P沟道Vhg嘉泰姆

-12VVhg嘉泰姆

-12VVhg嘉泰姆

-0.7VVhg嘉泰姆

-16AVhg嘉泰姆

-65AVhg嘉泰姆

18mΩVhg嘉泰姆

DNF2*2-6Vhg嘉泰姆

CXCP5367/AVhg嘉泰姆

P沟道Vhg嘉泰姆

-20VVhg嘉泰姆

-10VVhg嘉泰姆

-0.65VVhg嘉泰姆

-3AVhg嘉泰姆

-10AVhg嘉泰姆

65mΩVhg嘉泰姆

SOT23、SOT23-3L Vhg嘉泰姆

CXCP5367BVhg嘉泰姆

P沟道Vhg嘉泰姆

-20VVhg嘉泰姆

-12VVhg嘉泰姆

-0.7VVhg嘉泰姆

-2.8AVhg嘉泰姆

-10AVhg嘉泰姆

83mΩVhg嘉泰姆

SOT23Vhg嘉泰姆

CXCP5367BKR/BSR/BJRVhg嘉泰姆

P沟道Vhg嘉泰姆

-20VVhg嘉泰姆

-6VVhg嘉泰姆

-0.45VVhg嘉泰姆

-0.8AVhg嘉泰姆

-1.6AVhg嘉泰姆

350mΩVhg嘉泰姆

SOT-323、SOT-523、SOT-723Vhg嘉泰姆

CXCP5367CVhg嘉泰姆

P沟道Vhg嘉泰姆

-12VVhg嘉泰姆

-12VVhg嘉泰姆

-0.7VVhg嘉泰姆

-2.8AVhg嘉泰姆

-10AVhg嘉泰姆

85mΩVhg嘉泰姆

SOT23Vhg嘉泰姆

CXCP5367DVhg嘉泰姆

P沟道Vhg嘉泰姆

-20VVhg嘉泰姆

-6VVhg嘉泰姆

-0.45VVhg嘉泰姆

-0.8AVhg嘉泰姆

-4AVhg嘉泰姆

350mΩVhg嘉泰姆

SOT23Vhg嘉泰姆

CXCP5367DRVhg嘉泰姆

P沟道Vhg嘉泰姆

-20VVhg嘉泰姆

-6VVhg嘉泰姆

-0.45VVhg嘉泰姆

-0.8AVhg嘉泰姆

-4AVhg嘉泰姆

350mΩVhg嘉泰姆

DFN1006-3LVhg嘉泰姆

CXCP5367EVhg嘉泰姆

P沟道Vhg嘉泰姆

-12VVhg嘉泰姆

-12VVhg嘉泰姆

-0.7VVhg嘉泰姆

-2AVhg嘉泰姆

-7AVhg嘉泰姆

95mΩVhg嘉泰姆

SOT23Vhg嘉泰姆

CXCP5367KRVhg嘉泰姆

P沟道Vhg嘉泰姆

-20VVhg嘉泰姆

-10VVhg嘉泰姆

-0.65VVhg嘉泰姆

-3AVhg嘉泰姆

-6AVhg嘉泰姆

65mΩVhg嘉泰姆

SOT-323Vhg嘉泰姆

CXCP5368Vhg嘉泰姆

P沟道Vhg嘉泰姆

-20VVhg嘉泰姆

-12VVhg嘉泰姆

-0.7VVhg嘉泰姆

-4.1AVhg嘉泰姆

-15AVhg嘉泰姆

39mΩVhg嘉泰姆

SOT23Vhg嘉泰姆

CXCP5368BVhg嘉泰姆

P沟道Vhg嘉泰姆

-12VVhg嘉泰姆

-12VVhg嘉泰姆

-0.7VVhg嘉泰姆

-4.0AVhg嘉泰姆

-15AVhg嘉泰姆

40mΩVhg嘉泰姆

SOT23Vhg嘉泰姆

CXCP5393Vhg嘉泰姆

P沟道Vhg嘉泰姆

-20VVhg嘉泰姆

-12VVhg嘉泰姆

-0.7VVhg嘉泰姆

-8AVhg嘉泰姆

-32AVhg嘉泰姆

39mΩVhg嘉泰姆

DFN2*2-6Vhg嘉泰姆

CXCP5377Vhg嘉泰姆

P沟道Vhg嘉泰姆

-60VVhg嘉泰姆

-20VVhg嘉泰姆

-3.0VVhg嘉泰姆

-1.8AVhg嘉泰姆

-7AVhg嘉泰姆

170mΩVhg嘉泰姆

SOT-23-3LVhg嘉泰姆

CXCP5376Vhg嘉泰姆

P沟道Vhg嘉泰姆

-40VVhg嘉泰姆

-20VVhg嘉泰姆

-1.5VVhg嘉泰姆

-5.3AVhg嘉泰姆

-20AVhg嘉泰姆

73mΩVhg嘉泰姆

SOT23-3L、SOT23Vhg嘉泰姆

CXCP5369Vhg嘉泰姆

P沟道Vhg嘉泰姆

-12VVhg嘉泰姆

-12VVhg嘉泰姆

-0.65VVhg嘉泰姆

-6AVhg嘉泰姆

-20AVhg嘉泰姆

30mΩVhg嘉泰姆

SOT23-3LVhg嘉泰姆

CXCP5370/BVhg嘉泰姆

P沟道Vhg嘉泰姆

-30VVhg嘉泰姆

-12VVhg嘉泰姆

-1.0VVhg嘉泰姆

-4.2AVhg嘉泰姆

-30AVhg嘉泰姆

50mΩVhg嘉泰姆

SOT23-3LVhg嘉泰姆

CXCP5371/BVhg嘉泰姆

P沟道Vhg嘉泰姆

-30VVhg嘉泰姆

-12VVhg嘉泰姆

-1.0VVhg嘉泰姆

-4.2AVhg嘉泰姆

-30AVhg嘉泰姆

50mΩVhg嘉泰姆

SOT23-3L、SOT23Vhg嘉泰姆

CXCP5371CVhg嘉泰姆

P沟道Vhg嘉泰姆

-30VVhg嘉泰姆

-20VVhg嘉泰姆

-1.6VVhg嘉泰姆

-2.5AVhg嘉泰姆

-10AVhg嘉泰姆

72mΩVhg嘉泰姆

SOT23Vhg嘉泰姆

CXCP5371DVhg嘉泰姆

P沟道Vhg嘉泰姆

-30VVhg嘉泰姆

-12VVhg嘉泰姆

-0.9VVhg嘉泰姆

-4.6AVhg嘉泰姆

-32AVhg嘉泰姆

50mΩVhg嘉泰姆

SOT23-3LVhg嘉泰姆

CXCP5371PRVhg嘉泰姆

P沟道Vhg嘉泰姆

-30VVhg嘉泰姆

-12VVhg嘉泰姆

-1.0VVhg嘉泰姆

-5.2AVhg嘉泰姆

-30AVhg嘉泰姆

50mΩVhg嘉泰姆

SOT-89-3LVhg嘉泰姆

CXCP5372/BVhg嘉泰姆

P沟道Vhg嘉泰姆

-30VVhg嘉泰姆

-20VVhg嘉泰姆

-1.5VVhg嘉泰姆

-4.2AVhg嘉泰姆

-20AVhg嘉泰姆

55mΩVhg嘉泰姆

SOT23-3L、SOT23Vhg嘉泰姆

CXCP5373/BVhg嘉泰姆

P沟道Vhg嘉泰姆

-20VVhg嘉泰姆

-12VVhg嘉泰姆

-0.7VVhg嘉泰姆

-2.5AVhg嘉泰姆

-10AVhg嘉泰姆

118mΩVhg嘉泰姆

SOT23-3L、SOT23Vhg嘉泰姆

CXCP5374EVhg嘉泰姆

P沟道带ESDVhg嘉泰姆

-20VVhg嘉泰姆

-10VVhg嘉泰姆

-0.65VVhg嘉泰姆

-4.0AVhg嘉泰姆

-30AVhg嘉泰姆

34mΩVhg嘉泰姆

SOT23-3LVhg嘉泰姆

CXCP5375/BVhg嘉泰姆

P沟道Vhg嘉泰姆

-30VVhg嘉泰姆

-12VVhg嘉泰姆

-1.0VVhg嘉泰姆

-4.2AVhg嘉泰姆

-30AVhg嘉泰姆

50mΩVhg嘉泰姆

SOT23-3L、SOT23Vhg嘉泰姆

CXCP5384Vhg嘉泰姆

P沟道Vhg嘉泰姆

-30VVhg嘉泰姆

-20VVhg嘉泰姆

-1.5VVhg嘉泰姆

-12AVhg嘉泰姆

-60AVhg嘉泰姆

14mΩVhg嘉泰姆

SOP8Vhg嘉泰姆

CXCP5385Vhg嘉泰姆

P沟道Vhg嘉泰姆

-30VVhg嘉泰姆

-20VVhg嘉泰姆

-1.75VVhg嘉泰姆

-15AVhg嘉泰姆

-80AVhg嘉泰姆

8mΩVhg嘉泰姆

SOP8Vhg嘉泰姆

CXCP5390Vhg嘉泰姆

P沟道Vhg嘉泰姆

-60VVhg嘉泰姆

-20VVhg嘉泰姆

-1.9VVhg嘉泰姆

-12AVhg嘉泰姆

-36AVhg嘉泰姆

23mΩVhg嘉泰姆

SOP8Vhg嘉泰姆

CXCP5390BVhg嘉泰姆

P沟道Vhg嘉泰姆

-60VVhg嘉泰姆

-20VVhg嘉泰姆

-2.9VVhg嘉泰姆

-6.5AVhg嘉泰姆

-20AVhg嘉泰姆

39mΩVhg嘉泰姆

SOP8Vhg嘉泰姆

CXCP5383Vhg嘉泰姆

P沟道Vhg嘉泰姆

-30VVhg嘉泰姆

-20VVhg嘉泰姆

-1.5VVhg嘉泰姆

-9.1AVhg嘉泰姆

-50AVhg嘉泰姆

15mΩVhg嘉泰姆

SOP8Vhg嘉泰姆

CXCP5383BVhg嘉泰姆

P沟道Vhg嘉泰姆

-30VVhg嘉泰姆

-20VVhg嘉泰姆

-1.7VVhg嘉泰姆

-9.1AVhg嘉泰姆

-50AVhg嘉泰姆

17mΩVhg嘉泰姆

SOP8Vhg嘉泰姆

CXCP5380Vhg嘉泰姆

P沟道Vhg嘉泰姆

-12VVhg嘉泰姆

-12VVhg嘉泰姆

-0.7VVhg嘉泰姆

-16AVhg嘉泰姆

-65AVhg嘉泰姆

11.5mΩVhg嘉泰姆

SOP8Vhg嘉泰姆

CXCP5389Vhg嘉泰姆

P沟道Vhg嘉泰姆

-55VVhg嘉泰姆

-20VVhg嘉泰姆

-2.6VVhg嘉泰姆

-5AVhg嘉泰姆

-25AVhg嘉泰姆

64mΩVhg嘉泰姆

SOP8Vhg嘉泰姆

CXCP5387Vhg嘉泰姆

P沟道Vhg嘉泰姆

-40VVhg嘉泰姆

-20VVhg嘉泰姆

-1.5VVhg嘉泰姆

-6AVhg嘉泰姆

-24AVhg嘉泰姆

73mΩVhg嘉泰姆

SOP8Vhg嘉泰姆

CXCP5386Vhg嘉泰姆

P沟道Vhg嘉泰姆

-30VVhg嘉泰姆

-20VVhg嘉泰姆

-1.5VVhg嘉泰姆

-25AVhg嘉泰姆

-70AVhg嘉泰姆

6mΩVhg嘉泰姆

SOP8Vhg嘉泰姆

CXCP5382Vhg嘉泰姆

P沟道Vhg嘉泰姆

-30VVhg嘉泰姆

-20VVhg嘉泰姆

-1.9VVhg嘉泰姆

-7AVhg嘉泰姆

-28AVhg嘉泰姆

30mΩVhg嘉泰姆

SOP8Vhg嘉泰姆

CXCP5388Vhg嘉泰姆

P沟道Vhg嘉泰姆

-40VVhg嘉泰姆

-20VVhg嘉泰姆

-2.0VVhg嘉泰姆

-13AVhg嘉泰姆

-52AVhg嘉泰姆

12mΩVhg嘉泰姆

SOP8Vhg嘉泰姆

CXCP5388AVhg嘉泰姆

P沟道Vhg嘉泰姆

-40VVhg嘉泰姆

-20VVhg嘉泰姆

-1.9VVhg嘉泰姆

-17.5AVhg嘉泰姆

-70AVhg嘉泰姆

7.5mΩVhg嘉泰姆

SOP8Vhg嘉泰姆

CXCP5388BVhg嘉泰姆

P沟道Vhg嘉泰姆

-40VVhg嘉泰姆

-20VVhg嘉泰姆

-2.0VVhg嘉泰姆

-7.5AVhg嘉泰姆

-40AVhg嘉泰姆

30mΩVhg嘉泰姆

SOP8Vhg嘉泰姆

CXCP5391Vhg嘉泰姆

双P沟道Vhg嘉泰姆

-100VVhg嘉泰姆

-20VVhg嘉泰姆

-1.9VVhg嘉泰姆

-4.5AVhg嘉泰姆

-18AVhg嘉泰姆

85mΩVhg嘉泰姆

SOP8Vhg嘉泰姆

CXCP5392Vhg嘉泰姆

P沟道Vhg嘉泰姆

-22VVhg嘉泰姆

-8VVhg嘉泰姆

-0.69VVhg嘉泰姆

-3AVhg嘉泰姆

-12AVhg嘉泰姆

110mΩVhg嘉泰姆

DFN2*3-8Vhg嘉泰姆

CXCP5378Vhg嘉泰姆

P沟道Vhg嘉泰姆

-30VVhg嘉泰姆

-20VVhg嘉泰姆

-1VVhg嘉泰姆

-5.0AVhg嘉泰姆

-30AVhg嘉泰姆

50mΩVhg嘉泰姆

SOT23-6LVhg嘉泰姆

 Vhg嘉泰姆

◀ Previous:The CXCP5367C uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as -2.5V

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Next▶:The CXCP5367DR is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology

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