CXES4273高级负载管理交换机针对需要高度集成的解决方案的应用程序。它通过严格的关断状态电流目标和高负载电容（高达100mF）断开直流电源轨（<6V）供电的负载。CXES4273由旋转率控制的低阻抗MOSFET开关（典型为23mW）和集成模拟特性组成。回转率控制的导通特性可防止浪涌电流和由此导致的电源轨上的过大电压降。CXES4273具有真正的反向电流阻断（TRCB）功能，在接通和断开状态下阻止从VOUT到车辆识别号的不需要的反向电流。极低的关断状态电流消耗（最大小于1毫安）有助于满足备用电源要求。输入电压范围从1.5V到5.5V直流，支持广泛的应用于消费、光学、医疗、存储、便携式和工业设备电源管理。开关控制由一个逻辑输入（有源高电平）管理，该逻辑输入（有源高电平）能够直接与低压控制信号/通用输入/输出（GPIO）接口，而无需外部下拉电阻器。该设备采用先进、完全“绿色”兼容、1.2毫米x 0.8毫米、晶圆级芯片级封装（WLCSP），背面层压
·输入电压工作范围：1.5V至5.5V
·典型无线电数据系统（开）
–车辆识别号=5.5伏时为21兆瓦
–23兆瓦，车辆识别号=4.5伏
–车辆识别号=1.8V时为41mW
–车辆识别号=1.5伏时为90兆瓦
·t R=1.8ms时的回转率/涌流控制（典型值）
·3.5A最大持续电流能力
·低关断开关电流<1毫安
·真反向电流闭锁（TRCB）
·逻辑CMOS IO满足GPIO接口和相关电源要求的JESD76标准
·防静电
–人体模型>8kV
–充电设备型号>1.5kV
–IEC 61000-4-2空气放电>15kV
–IEC 61000-4-2接触放电>8kV
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[ CXES4273 ]"
目录
7.相关产品
产品概述 返回TOP
The CXES4273 advanced load management switch targets applications requiring a highly integrated solution. It disconnects loads powered from the DC power rail (<6V) with stringent off-state current targets and high load capacitances (up to 100mF). The CXES4273 consists of slewrate controlled low-impedance MOSFET switch (23mW typical) and integrated analog features. The slew-rate controlled turn-on characteristic prevents inrush current and the resulting excessive voltage droop on power rails. The CXES4273 has a True Reverse Current Blocking (TRCB) function that obstructs unwanted reverse current from VOUT to VIN during both ON and OFF states. The exceptionally low off-state current drain (<1mA maximum) facilitates compliance with standby power requirements. The input voltage range operates from 1.5V to 5.5VDC to support a wide range of applications in consumer, optical, medical, storage, portable, and industrial device power management. Switch control is managed by a logic input (active HIGH) capable of interfacing directly with low-voltage control signal / GeneralPurpose Input / Output (GPIO) without an external pulldown resistor. The device is packaged in advanced, fully “green” compliant, 1.2mm x 0.8mm, Wafer-Level Chip-Scale Package (WLCSP) with backside lamination
产品特点 返回TOP
· Input Voltage Operating Range:1.5V to 5.5V
· Typical RDS(ON)
– 21mW at VIN =5.5V
– 23mW at VIN =4.5V
– 41mW at VIN =1.8V
– 90mW at VIN =1.5V
· Slew Rate/Inrush Control with t R = 1.8ms(Typ)
· 3.5A Maximum Continuous Current Capability
· Low Off Switch Current<1mA
· True Reverse Current Blocking(TRCB)
· Logic CMOS IO Meets JESD76 Standard for GPIO Interface and Related Power Supply Requirements
· ESD Protected
– Human Body Model >8kV
– Charged Device Model >1.5kV
– IEC 61000-4-2 Air Discharge >15kV
– IEC 61000-4-2 Contact Discharge >8kV
· Tiny small WLCSP1.2x0.8-6 and VTDFN1.6x1.2-4 Package
· Lead Free and Green Devices Available (RoHS Compliant)
应用范围 返回TOP
· Smart Phones
· Tablets PCs
· Portable Devices
技术规格书（产品PDF) 返回TOP
需要详细的PDF规格书请扫一扫微信联系我们，还可以获得免费样品以及技术支持！
产品封装图 返回TOP
电路原理图 返回TOP
相关芯片选择指南 返回TOP 更多同类产品......
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Products > Switch > Power Distribution Controller |
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Part_No |
Package |
No.of Channel |
External Power Switch Type |
Input Voltage (V) |
Quescint Current (uA) |
Wrong Input Voltage Protection |
Inpute Voltage UVLO |
SCP |
OCP (A) |
OVP |
UVP |
EN |
High/ Low EN |
POK |
|
|
min |
max |
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|
SOP8 TDFN2x2-8 |
1 |
N-Channel MOSFET |
10 |
26 |
750 |
Y |
Y |
Y |
Y |
Y |
Y |
Y |
H |
Y |
|
|
TDFN3x3-10 |
1 |
N-Channel MOSFET |
5 |
26 |
500 |
Y |
Y |
Y |
Y |
Y |
Y |
H |
Y |
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|
TDFN3x3-10 |
1 |
N-channel MOSFET |
5 |
26 |
500 |
Y |
Y |
Y |
Y |
Y |
Y |
H |
Y |
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|
Switch> Analog Switch |
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|
Part_No |
Package & Pins |
VDD Voltage (V) |
IDD, Supply Current (mA) |
Input Voltage (max)(V) |
Power Switch On Resistance(milohm) |
Turn-On Time(ms) |
Turn-Off Time(ms) |
|
|
min |
max |
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|
WLCSP1.2x1.2-9 |
2.9 |
5.5 |
35 |
0~5.5 |
0.2 |
5 |
1 |
|
|
WLCSP1.2x0.8-6 |
1.5 |
5.5 |
20 |
1.5-5.5 |
22 |
4.4 |
36.5 |
|
|
WLCSP 1.42x0.92-6 |
1.7 |
3.6 |
0.5 |
VDD-5.5~VDD |
0.2 |
0.1 |
1 |
|
|
Switch> DrMOS |
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|
Part_No |
Package |
Description |
Topology |
# of PWM Outputs |
Drive Lout (A) |
Vin (V) |
Fmax (Khz) |
R-Top (milohm) |
R-Sync (milohm) |
Iq (No load) (uA) |
En pin |
Sync Pin |
PSM/ CCM pin |
|
|
min |
max |
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|
TQFN4 x4-23P |
High-Performance, High-Current DrMOS Power Module |
high/Low-sideN-channel MOSFET |
1 |
8 |
4.5 |
25 |
1500 |
25 |
7 |
90 |
Y |
N |
Y |
|
|
TQFN4x4 -23P |
High-Performance, High-Current DrMOS Power Module |
high/Low-sideN-channel MOSFET |
1 |
6 |
4.5 |
25 |
1500 |
30 |
12 |
90 |
Y |
N |
Y |
|
|
TQFN5 x5-30 |
High-Performance,High-Current DrMOS Power Module |
high/Low-sideN-channel |
MOSFET1 |
13 |
4.5 |
25 |
1500 |
9.7 |
5.2 |
90 |
Y |
N |
Y |
|
|
TQFN5 x5-30 |
High-Performance,High-Current DrMOS Power Module |
high/Low-sideN-channel MOSFET |
1 |
15 |
4.5 |
25 |
1500 |
8 |
4.5 |
90 |
Y |
N |
Y |
|
|
TQFN5 x5-30 |
High-Performance,High-Current DrMOS Power Module |
high/Low-sideN-channel MOSFET |
1 |
15 |
4.5 |
25 |
1500 |
8 |
4.5 |
90 |
Y |
N |
Y |
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