CXCP5391 uses advanced trench technology and design to provide
excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested
● VDS =-100V,ID =-4.5A
RDS(ON)<100mΩ @ VGS=-10V (Typ:85mΩ)
● Super high dense cell design
● Advanced trench process technology
● Reliable and rugged
● High density cell design for ultra low On-Resistance
-
[ CXCP5391 ]"
目录
1.产品概述 2.产品特点 3.应用范围 4.技术规格书下载（产品PDF文档）
5.产品封装图 6.电路原理图 7.功能概述 8.相关产品
一,产品概述(General Description) 
The CXCP5391 uses advanced trench technology and design to provide
excellent RDS(ON) with low gate charge. It can be used in a wide variety of
applications. It is ESD protested
二.产品特点(Features)
● VDS =-100V,ID =-4.5A
RDS(ON)<100mΩ @ VGS=-10V (Typ:85mΩ)
● Super high dense cell design
● Advanced trench process technology
● Reliable and rugged
● High density cell design for ultra low On-Resistance
三,应用范围 (Applications)
● Power management in notebook computer
● Portable equipment and battery powered systems
四.技术规格书下载（产品PDF）
五,产品封装图 (Package)
六.电路原理图
七,功能概述
|
Parameter |
Symbol |
Limit |
Unit |
|
Drain-Source Voltage |
VDS |
-100 |
V |
|
Gate-Source Voltage |
VGS |
±20 |
V |
|
Drain Current-Continuous |
ID |
-4.5 |
A |
|
Drain Current-Continuous(TC=100℃) |
ID (100℃) |
-3.0 |
A |
|
Pulsed Drain Current |
IDM |
-18 |
A |
|
Maximum Power Dissipation |
PD |
3 |
W |
|
Derating factor |
0.56 |
W/℃ |
|
|
Operating Junction and Storage Temperature Range |
TJ,TSTG |
-55 To 150 |
℃ |
八,相关芯片选择指南 更多同类产品......
|
单P沟道低压MOS场效应管 |
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|
型号 |
沟道 |
VDS |
VGS |
VTH |
ID |
IDM |
RDS(on) |
封装 |
|
(Max) |
(Typ) |
(Max) |
(Max) |
|||||
|
P沟道 |
-50V |
20V |
-2.0V |
-0.13A |
-0.52A |
8mΩ |
SOT23 |
|
|
P沟道 |
-12V |
-8V |
-1.0V |
-8A |
-28A |
28mΩ |
DFN2*2-6 |
|
|
P沟道 |
-12V |
-12V |
-0.7V |
-16A |
-65A |
18mΩ |
DNF2*2-6 |
|
|
P沟道 |
-20V |
-10V |
-0.65V |
-3A |
-10A |
65mΩ |
SOT23、SOT23-3L |
|
|
P沟道 |
-20V |
-12V |
-0.7V |
-2.8A |
-10A |
83mΩ |
SOT23 |
|
|
P沟道 |
-20V |
-6V |
-0.45V |
-0.8A |
-1.6A |
350mΩ |
SOT-323、SOT-523、SOT-723 |
|
|
P沟道 |
-12V |
-12V |
-0.7V |
-2.8A |
-10A |
85mΩ |
SOT23 |
|
|
P沟道 |
-20V |
-6V |
-0.45V |
-0.8A |
-4A |
350mΩ |
SOT23 |
|
|
P沟道 |
-20V |
-6V |
-0.45V |
-0.8A |
-4A |
350mΩ |
DFN1006-3L |
|
|
P沟道 |
-12V |
-12V |
-0.7V |
-2A |
-7A |
95mΩ |
SOT23 |
|
|
P沟道 |
-20V |
-10V |
-0.65V |
-3A |
-6A |
65mΩ |
SOT-323 |
|
|
P沟道 |
-20V |
-12V |
-0.7V |
-4.1A |
-15A |
39mΩ |
SOT23 |
|
|
P沟道 |
-12V |
-12V |
-0.7V |
-4.0A |
-15A |
40mΩ |
SOT23 |
|
|
P沟道 |
-20V |
-12V |
-0.7V |
-8A |
-32A |
39mΩ |
DFN2*2-6 |
|
|
P沟道 |
-60V |
-20V |
-3.0V |
-1.8A |
-7A |
170mΩ |
SOT-23-3L |
|
|
P沟道 |
-40V |
-20V |
-1.5V |
-5.3A |
-20A |
73mΩ |
SOT23-3L、SOT23 |
|
|
P沟道 |
-12V |
-12V |
-0.65V |
-6A |
-20A |
30mΩ |
SOT23-3L |
|
|
P沟道 |
-30V |
-12V |
-1.0V |
-4.2A |
-30A |
50mΩ |
SOT23-3L |
|
|
P沟道 |
-30V |
-12V |
-1.0V |
-4.2A |
-30A |
50mΩ |
SOT23-3L、SOT23 |
|
|
P沟道 |
-30V |
-20V |
-1.6V |
-2.5A |
-10A |
72mΩ |
SOT23 |
|
|
P沟道 |
-30V |
-12V |
-0.9V |
-4.6A |
-32A |
50mΩ |
SOT23-3L |
|
|
P沟道 |
-30V |
-12V |
-1.0V |
-5.2A |
-30A |
50mΩ |
SOT-89-3L |
|
|
P沟道 |
-30V |
-20V |
-1.5V |
-4.2A |
-20A |
55mΩ |
SOT23-3L、SOT23 |
|
|
P沟道 |
-20V |
-12V |
-0.7V |
-2.5A |
-10A |
118mΩ |
SOT23-3L、SOT23 |
|
|
P沟道带ESD |
-20V |
-10V |
-0.65V |
-4.0A |
-30A |
34mΩ |
SOT23-3L |
|
|
P沟道 |
-30V |
-12V |
-1.0V |
-4.2A |
-30A |
50mΩ |
SOT23-3L、SOT23 |
|
|
P沟道 |
-30V |
-20V |
-1.5V |
-12A |
-60A |
14mΩ |
SOP8 |
|
|
P沟道 |
-30V |
-20V |
-1.75V |
-15A |
-80A |
8mΩ |
SOP8 |
|
|
P沟道 |
-60V |
-20V |
-1.9V |
-12A |
-36A |
23mΩ |
SOP8 |
|
|
P沟道 |
-60V |
-20V |
-2.9V |
-6.5A |
-20A |
39mΩ |
SOP8 |
|
|
P沟道 |
-30V |
-20V |
-1.5V |
-9.1A |
-50A |
15mΩ |
SOP8 |
|
|
P沟道 |
-30V |
-20V |
-1.7V |
-9.1A |
-50A |
17mΩ |
SOP8 |
|
|
P沟道 |
-12V |
-12V |
-0.7V |
-16A |
-65A |
11.5mΩ |
SOP8 |
|
|
P沟道 |
-55V |
-20V |
-2.6V |
-5A |
-25A |
64mΩ |
SOP8 |
|
|
P沟道 |
-40V |
-20V |
-1.5V |
-6A |
-24A |
73mΩ |
SOP8 |
|
|
P沟道 |
-30V |
-20V |
-1.5V |
-25A |
-70A |
6mΩ |
SOP8 |
|
|
P沟道 |
-30V |
-20V |
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