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首页 > Products > Power Device > P-channel MOSFETs > CXCP5390 CXCP5390B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications
CXCP5390 CXCP5390B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications

CXCP5390 CXCP5390B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications
● VDS =-60V,ID =-12.5A
RDS(ON)<28mΩ @ VGS=-10V
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation

CXCP5390 CXCP5390B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications
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   产品概述 返回TOPVMp嘉泰姆

The CXCP5390 CXCP5390B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications.

   产品特点 返回TOPVMp嘉泰姆

● VDS =-60V,ID =-12.5A VMp嘉泰姆

RDS(ON)<28mΩ @ VGS=-10V VMp嘉泰姆

● High density cell design for ultra low Rdson VMp嘉泰姆

● Fully characterized avalanche voltage and current VMp嘉泰姆

● Good stability and uniformity with high EAS VMp嘉泰姆

● Excellent package for good heat dissipationVMp嘉泰姆

   应用范围 返回TOPVMp嘉泰姆

● Load switchVMp嘉泰姆

   技术规格书（产品PDF) 返回TOP VMp嘉泰姆

     需要详细的PDF规格书请扫一扫微信联系我们，还可以获得免费样品以及技术支持！VMp嘉泰姆

 QQ截图20160419174301.jpgVMp嘉泰姆

产品封装图 返回TOPVMp嘉泰姆

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电路原理图 返回TOPVMp嘉泰姆

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