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首页 > Products > Power Device > P-channel MOSFETs >CXCP5367B Adopt advanced channel technology to provide excellent RDS (on) low grid charging and operation at grid voltage as low as - 2.5V
CXCP5367B Adopt advanced channel technology to provide excellent RDS (on) low grid charging and operation at grid voltage as low as - 2.5V

The CXCP5367B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as -2.5V. This device is suitable for use as a battery protection or in other switching application

CXCP5367B Adopt advanced channel technology to provide excellent RDS (on) low grid charging and operation at grid voltage as low as - 2.5V
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   产品概述 返回TOPh8h嘉泰姆

The CXCP5367B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as -2.5V. This device is suitable for use as a battery protection or in other switching application.

   产品特点 返回TOPh8h嘉泰姆

● VDS = -20V,ID =-2.8A h8h嘉泰姆

RDS(ON)<115mΩ @ VGS =-4.5V h8h嘉泰姆

RDS(ON)<160mΩ @ VGS =-2.5V h8h嘉泰姆

● High Power and current handing capability h8h嘉泰姆

● Lead free product is acquired h8h嘉泰姆

● Surface Mount Packageh8h嘉泰姆

   应用范围 返回TOPh8h嘉泰姆

● Battery protection h8h嘉泰姆

● Load switch h8h嘉泰姆

● Power managementh8h嘉泰姆

   技术规格书（产品PDF) 返回TOP h8h嘉泰姆

     需要详细的PDF规格书请扫一扫微信联系我们，还可以获得免费样品以及技术支持！h8h嘉泰姆

 QQ截图20160419174301.jpgh8h嘉泰姆

产品封装图 返回TOPh8h嘉泰姆

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电路原理图 返回TOPh8h嘉泰姆

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350mΩh8h嘉泰姆

SOT-323、SOT-523、SOT-723h8h嘉泰姆

CXCP5367Ch8h嘉泰姆

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-2.8Ah8h嘉泰姆

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◀ Previous:CXCP5367 CXCP5367A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch

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Next▶:CXCP5367BKR CXCP5367BSR CXCP5367BJR is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to mini

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