CXMS5216 Series P-channel enhancement mode field-effect transistor ,produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications, and low power dissipation, and low power dissipation in a very small outline surface mount package.
-30V/-4.1A RDS(ON)＜88mΩ@ VGS=-10V,ID=-4.1A
RDS(ON)＜108mΩ@ VGS=-4.5V,ID=-3A
-
[ CXMS5216 ]"
目录
7.相关产品
产品概述 返回TOP
CXMS5216 Series P-channel enhancement mode field-effect transistor ,produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications, and low power dissipation, and low power dissipation in a very small outline surface mount package.
产品特点 返回TOP
l -30V/-4.1A RDS(ON)＜88mΩ@ VGS=-10V,ID=-4.1A
RDS(ON)＜108mΩ@ VGS=-4.5V,ID=-3A
l High Density Cell Design For Ultra Low On-Resistance
l Subminiature surface mount package: SOT23
应用范围 返回TOP
l Power management
l Load switch
l Battery protection
技术规格书（产品PDF) 返回TOP需要详细的PDF规格书请扫一扫微信联系我们，还可以获得免费样品以及技术支持！
产品封装图 返回TOP
电路原理图 返回TOP
略
相关芯片选择指南 返回TOP 更多同类产品......
|
MOSFET(金属氧化层半导体场效应晶体管)>>>MOSFET(金属氧化层半导体场效应晶体管) |
|||||||
|
Part |
Mode |
VDS(Max) |
VGS |
ID(Max) |
RDS(on) |
Application |
Package |
|
Number |
|||||||
|
P channel |
-20V |
-8V |
-2.8A |
93mΩ |
①②③④⑤ |
SOT23/SOT23-3 |
|
|
P channel |
-20V |
-12V |
-3.1A |
77mΩ |
①②③④⑤ |
SOT23 |
|
|
P channel |
-30V |
-12V |
-4.2A |
55mΩ |
①②③④⑤⑥⑦⑧ |
SOT23/SOT23-3 |
|
|
P channel |
-30V |
-20V |
-2.9A |
92mΩ |
①②③④⑤⑥⑦⑧ |
SOT23 |
|
|
P channel |
-30V |
-20V |
-4.1A |
46mΩ |
①②③④⑤⑥⑦⑧ |
SOT23/SOT23-3 |
|
|
P channel |
-30V |
-20V |
-6A |
46mΩ |
①②③④⑤⑥⑦⑨ |
SOP8/SOT89-3 |
|
|
Double P |
-30V |
-20V |
-6A |
53mΩ |
①②③④⑤⑥⑦⑧ |
SOP8 |
|
|
Double P |
-30V |
-20V |
-6A |
46mΩ |
①②③④⑤⑥⑦⑧ |
SOP8 |
|
|
Applications： ①Mobile phone②MID③GPS④DC/DC Converter⑤Load Switch⑥Power Management Notebook⑦LCD Display Inverter⑧Battery powered system⑨Battery Protection |
|||||||
