• [ CXMS5216 ]"

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目录

1.产品概述    2.产品特点     i82嘉泰姆

3.应用范围    4.技术规格书下载（PDF文档）i82嘉泰姆

5.产品封装    6.电路原理图  i82嘉泰姆

     7.相关产品i82嘉泰姆

产品概述                                             返回TOP

CXMS5216 Series P-channel enhancement mode field-effect transistor ,produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications, and low power dissipation, and low power dissipation in a very small outline surface mount package.

产品特点  返回TOP

l -30V/-4.1A RDS(ON)＜88mΩ@ VGS=-10V,ID=-4.1A 

   RDS(ON)＜108mΩ@ VGS=-4.5V,ID=-3A i82嘉泰姆

l High Density Cell Design For Ultra Low On-Resistance i82嘉泰姆

l Subminiature surface mount package: SOT23i82嘉泰姆

应用范围                                             返回TOP

l Power management 

l Load switch i82嘉泰姆

l Battery protectioni82嘉泰姆

需要详细的PDF规格书请扫一扫微信联系我们，还可以获得免费样品以及技术支持！i82嘉泰姆

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产品封装图                                               返回TOP

电路原理图                                               返回TOP

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Next▶:CXMS5217SG Series P-channel enhancement mode field-effect transistor ,produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance